IRF730A Datasheet PDF - Vishay


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IRF730A
Vishay

Part Number IRF730A
Description Power MOSFET
Page 9 Pages

IRF730A datasheet pdf
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Power MOSFET
IRF730A, SiHF730A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
400
VGS = 10 V
22
Qgs (nC)
5.8
Qgd (nC)
9.3
Configuration
Single
1.0
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both US Line Input
Only)
TO-220AB
IRF730APbF
SiHF730A-E3
IRF730A
SiHF730A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 19 mH, Rg = 25 Ω, IAS = 5.5 A (see fig. 12).
c. ISD 5.5 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
400
± 30
5.5
3.5
22
0.6
290
5.5
7.4
74
4.6
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91045
S11-0508-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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IRF730A, SiHF730A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Case (Drain)
Case-to-Sink, Flat, Greased Surface
RthJC
RthCS
Maximum Junction-to-Ambient
RthJA
TYP.
-
0.50
-
MAX.
1.70
-
62
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
gfs
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.3 Ab
VDS = 50 V, ID = 3.3 A
400 -
- 0.5
-V
- V/°C
2.0 - 4.5 V
- - ± 100 nA
- - 25
μA
- - 250
- - 1.0 Ω
3.1 -
-S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VDS = 1.0 V, f = 1.0 MHz
VGS = 0 V
VDS = 320 V, f = 1.0 MHz
VDS = 0 V to 320 Vc
VGS = 10 V
ID = 3.5 A, VDS = 320 V
see fig. 6 and 13b
VDD = 200 V, ID = 3.5 A
Rg = 12 Ω, RD = 57 Ω,
see fig. 10b
-
-
-
-
-
-
-
-
-
-
-
-
-
600 -
103 -
4.0 -
pF
890 -
30 -
45 -
- 22
- 5.8 nC
- 9.3
10 -
22 -
ns
20 -
16 -
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
- - 5.5
A
- - 22
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.5 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μsb
-
370 550 ns
Qrr - 1.6 2.4 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com
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Document Number: 91045
S11-0508-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF730A, SiHF730A
Vishay Siliconix
102 VGS
Top 15 V
10 V
8.0 V
10 7.0 V
6.0 V
5.5 V
5.0 V
1 Bottom 4.5 V
0.1
10-2
0.1
91045_01
4.5 V
20 µs Pulse Width
TC = 25 °C
1 10 102
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
102
10 TJ = 150 °C
TJ = 25 °C
1
0.1
4.0
91045_03
20 µs Pulse Width
VDS = 50 V
5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
102
Top
VGS
15 V
10 V
10 8.0 V
7.0 V
6.0 V
5.5 V
1 5.0 V
Bottom 4.5 V
4.5 V
0.1
10-2
0.1
91045_02
20 µs Pulse Width
TC = 150 °C
1 10 102
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
2.5
ID = 5.5 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91045_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91045
S11-0508-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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IRF730A, SiHF730A
Vishay Siliconix
105
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
104
Crss = Cgd
Coss = Cds + Cgd
103 Ciss
102
10
1
1
91045_05
Coss
Crss
10 102
VDS, Drain-to-Source Voltage (V)
103
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
102
10 TJ = 150 °C
1 TJ = 25 °C
0.1
0.4
91045_07
VGS = 0 V
0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 5.5 A
16 VDS = 320 V
VDS = 200 V
12 VDS = 80 V
8
4
0
0
91045_06
For test circuit
see figure 13
5 10 15 20 25
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
102
Operation in this area limited
by RDS(on)
10 µs
10
100 µs
1
0.1
10
91045_08
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
102 103
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91045
S11-0508-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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