IR3316PBF Datasheet PDF - International Rectifier


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IR3316PBF
International Rectifier

Part Number IR3316PBF
Description LOW EMI CURRENT SENSE HIGH SIDE SWITCH
Page 12 Pages

IR3316PBF datasheet pdf
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Data Sheet No. PD60286_C
IR3316(S)PbF
LOW EMI CURRENT SENSE HIGH SIDE SWITCH
Features
Load current feedback
Programmable over current shutdown
Active clamp
ESD protection
Input referenced to Vcc
Over temperature shutdown
Switching time optimized for low EMI
Reverse battery protection
Description
The IR3316(S)PbF is a fully protected 4 terminals high
side switch. The input signal is referenced to Vcc. When
the input voltage Vcc - Vin is higher than the specified
threshold, the output power Mosfet is turned on. When the
Vcc - Vin is lower than the specified Vil threshold, the
output Mosfet is turned off. A current proportional to the
power Mosfet current is sourced to the Ifb pin. Over
current shutdown occurs when Vst-Vin > 4.5V. The current
shutdown threshold is adjusted by selecting the proper
RIfb. Either over current and over temperature latches off
the switch. The device is reset by pulling the input pin
high. Other integrated protections (ESD, reverse battery,
active clamp) make the switch very rugged in automotive
environment.
Typical Connection
Product Summary
Rds(on)
7 mmax.
Vcc op.
6 to 26V
Current Ratio
8800
Prog. Ishutdown 10 to 90A
Vclamp
40V
Packages
TO-220
IR3316
D²Pak
Pin 4 and 5 fused
IR3316S
Current feeback
Input
On
Off
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Vcc
IN IR3316S
Ifb
10k
Out
Battery
Rifb
Logic
Ground
Power
Ground
Load
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IR3316(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Vcc lead. (Tambient=25°C unless otherwise specified).
Symbol Parameter
Min. Max. Units
Vcc-Vin
Maximum Vcc voltage
-16 37
Vcc-Vin cont. Maximum continuous Vcc voltage
Vcc-Vfb
Maximum Ifb voltage
-16 26
-16 33
V
Vcc-Vout
Maximum output voltage
-0.3 37
Ids cont.
Ids pulsed
Maximum body diode continuous current Rth=60°C/W (1)
Maximum body diode pulsed current (1)
2.8
100
A
Pd Maximum power dissipation Rth=60°C/W
2 W
ESD1
ESD2
Electrostatic discharge voltage (Human body) C=100pF, R=1500
Electrostatic discharge voltage (Machine Model) C=200pF,R=0
4 kV
0.5
Tj max.
Max. storage & operating temperature junction temperature
-40 150
°C
Min Rfb
Minimum on the resistor on Ifb pin
0.3
k
Ifb max.
Max. Ifb current
-50 50
mA
(1) Limited by junction temperature. Pulsed is also limited by wiring
Thermal Characteristics
Symbol
Parameter
Typ. Max. Units
Rth1
Rth2
Thermal resistance junction to ambient D²-Pak Std footprint
Thermal resistance junction to case D²-Pak
60
0.7 °C/W
Rth2
Thermal resistance junction to case TO220
0.7
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
Parameter
Min. Max. Units
Iout Continuous output current
Tambient=85°C, Rth=5°C/W, Tj=125°C
23 A
Tambient=85°C, Rth=60°C/W, Tj=125°C
7
Rifb Recommended Ifb resistor (2)(3)
0.5 3.5
k
Pulse min.
Minimum turn-on pulse width
1 ms
Fmax.
Maximum operating frequency
200 Hz
2) If Rifb is too low, the device can be damaged.
3) If Rifb is too high, the device may not switch on.
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IR3316(S)PbF
Protection Characteristics
Tj=25°C, Rifb=500 to 5k
Symbol Parameter
Vifb-Vin@Isd Over-current shutdown threshold
Tsd Over temperature threshold
OV Over voltage protection (not latched)
Isdf Fixed over current shutdown
Isd_1k
Programmable over current shutdown 1k
Treset
Time to reset protection
Min. pulse Min. pulse width (no WAIT state)
WAIT
WAIT function timer
Rds(on) rev. Reverse battery On state resistance
Min.
4
26
90
30
400
0.4
4
Typ.
4.7
165
29
120
40
50
900
1
6.7
Max.
5.6
33
140
50
500
2000
2
10
Units
V
°C
V
A
µs
ms
m
Test Conditions
See fig. 5
Vifb<Vifb-Vin@Isd
Rifb=1k
See fig. 5
See fig. 4 and 5
Vcc-Vin=-14V,
Iout=30A
Static Electrical Characteristics
Tj=25°C, Vcc=14V (unless otherwise specified)
Symbol Parameter
Min. Typ. Max. Units Test Conditions
Vcc op.
Operating Voltage range
6 26 V
Icc off
Supply leakage current
1.5 5
µA
Vin=Vcc, Vcc-Vout=14V,
Vcc-Vifb=14V
Iin, on
On state IN positive current
1.5 3
6 mA Vcc-Vin=14V
Vih
High level Input threshold voltage (4)
5.4 6.2
Vil
Low level Input threshold voltage (4)
4 4.9 5.8
V
Vhyst
Input hysteresis Vih-Vil
0.2 0.4
1
Iout Drain to source leakage current
1.2 5
µA
Vin=Vcc, Vcc-Vifb=0V,
Vcc-Vout=14V
Rds(on)
On state resistance (5) Tj=25°C
4 5.5 7
Iout=30A, Vcc-Vin=14V
On state resistance (5) Tj=25°C
4 6 10 mIout=17A, Vcc-Vin=6V
On state resistance (5)(6) Tj=150°C
7 10.5 13.5
Iout=30A, Vcc-Vin=14V
V clamp1
V clamp2
Vcc to Vout clamp voltage 1
Vcc to Vout clamp voltage 2
36 39
40 43
V
Iout=50mA
Iout=30A
(4) Input thresholds are measured directly between the input pin and the tab. Any parasitic resistance in common between
the load current path and the input signal path can significantly affect the thresholds.
(5) Rdson is measured between the tab and the Out pin, 5mm away from the package.
(6) Guaranteed by design
Switching Electrical Characteristics
Vcc=14V, Resistive load=0.5, Tj=25°C
Symbol Parameter
Tdon
Turn on delay time to 10% Vcc
Tr1 Rise time to Vcc-Vout=5V
Tr2 Rise time to Vcc-Vout=0.1Vcc
Eon Turn on energy
Tdoff
Turn off delay time
Tf Fall time to Vout=10% of Vcc
Eoff Turn off energy
Min.
30
20
30
30
35
Typ.
120
50
80
14
140
100
7
Max.
300
125
200
350
250
Units
µs
mJ
µs
mJ
Test Conditions
See figure 2
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IR3316(S)PbF
Current Sense Characteristics
Symbol Parameter
Ratio
I Load/Iifb current ratio
Ratio_TC
Offset
Trst
I Load/Iifb variation aver temperature(6)
Load current diagnostic offset
Ifb response time (low signal)
Min. Typ.
7,500 8,800
-5
-0.22
0
1
Max.
9,950
+5
+0.2
Units
%
A
µs
Test Conditions
Tj=25°C, Rfb=500,
Iout=60A
Tj=-40°C to 150°C
Iout=2A
90% of the Iout step
Functional Block Diagram
All values are typical
VCC
43V 3mA
+
-
4.7V
-
+
Charge
Pump
Driver
On/Off
Fast turn-off
ResetLatchQ
Set
Iout > 120A
Tj > 165°C
+
-
29V
Wait
timer
1 ms
timer
400µs
Min. Pulse
-
+
reverse
battery
protection
38V
43V
43V
IN IFB OUT
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