IPU60R1K5CE Datasheet PDF - Infineon Technologies


www.Datasheet-PDF.com

IPU60R1K5CE
Infineon Technologies

Part Number IPU60R1K5CE
Description MOSFET
Page 14 Pages

IPU60R1K5CE datasheet pdf
View PDF for PC
IPU60R1K5CE pdf
View PDF for Mobile


No Preview Available !

IPD60R1K5CE,IPU60R1K5CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
DPAK
tab
2
1
3
IPAK
tab
12 3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
1500
m
Id. 5
A
Qg.typ
9.4
nC
ID,pulse
8
A
Eoss@400V
1
µJ
Type/OrderingCode
IPD60R1K5CE
IPU60R1K5CE
Package
PG-TO 252
PG-TO 251
Marking
60S1K5CE
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31



No Preview Available !

600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
2016-03-31



No Preview Available !

600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
TO-251, TO252
Storage temperature
Operating junction temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
VGS
Ptot
Tstg
Tj
IS
IS,pulse
dv/dt
Maximum diode commutation speed dif/dt
Min.
-
-
-
-
-
-
-
-20
-30
Values
Typ. Max.
-5
- 3.2
-8
- 26
- 0.09
- 0.6
- 50
- 20
- 30
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=0.6A; VDD=50V; see table 11
mJ ID=0.6A; VDD=50V; see table 11
A-
V/ns VDS=0...480V
V static;
V AC (f>1 Hz)
- - 49 W TC=25°C
-40 -
-40 -
--
--
--
--
150 °C -
150 °C -
3.5 A TC=25°C
8 A TC=25°C
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
2Thermalcharacteristics
Table3ThermalcharacteristicsTO-251,TO252
Parameter
Symbol
Values
Min. Typ. Max.
Thermal resistance, junction - case RthJC
- - 2.57
Thermal resistance, junction - ambient RthJA
- - 62
Soldering temperature, wavesoldering
only allowed at leads
Tsold
- - 260
Unit Note/TestCondition
°C/W -
°C/W leaded
°C 1.6mm (0.063 in.) from case for 10s
1) Limited by Tj max. Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
3
2016-03-31



No Preview Available !

600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
600
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3.0 3.5
-1
10 -
- 100
1.26 1.50
3.28 -
14 -
Unit Note/TestCondition
V VGS=0V,ID=0.25mA
V VDS=VGS,ID=0.09mA
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
VGS=10V,ID=1.1A,Tj=25°C
VGS=10V,ID=1.1A,Tj=150°C
f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
200 -
16 -
11 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 41.3 - pF ID=constant,VGS=0V,VDS=0...480V
-
8-
ns
VDD=400V,VGS=10V,ID=1.4A,
RG=12.2;seetable10
-
7-
ns
VDD=400V,VGS=10V,ID=1.4A,
RG=12.2;seetable10
-
40 -
ns
VDD=400V,VGS=10V,ID=1.4A,
RG=12.2;seetable10
-
20 -
ns
VDD=400V,VGS=10V,ID=1.4A,
RG=12.2;seetable10
Min.
-
-
-
-
Values
Typ. Max.
1.1 -
5-
9.4 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=1.4A,VGS=0to10V
nC VDD=480V,ID=1.4A,VGS=0to10V
nC VDD=480V,ID=1.4A,VGS=0to10V
V VDD=480V,ID=1.4A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Final Data Sheet
4
2016-03-31




IPU60R1K5CE datasheet pdf
Download PDF
IPU60R1K5CE pdf
View PDF for Mobile


Similiar Datasheets : IPU60R1K5CE

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact