IPB120N04S4-04 Datasheet PDF - Infineon


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IPB120N04S4-04
Infineon

Part Number IPB120N04S4-04
Description Power-Transistor
Page 8 Pages

IPB120N04S4-04 datasheet pdf
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OptiMOS-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• 100% Avalanche tested
IPB120N04S4-04
Product Summary
V DS
R DS(on),max
ID
40 V
3.6 mW
120 A
PG-TO263-3-2
Type
IPB120N04S4-04
Package
PG-TO263-3-2
Ordering Code Marking
- 4N0404
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
120
91
480
75
120
±20
79
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2014-04-07



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IPB120N04S4-04
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case
R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 1.9 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=40µA
I DSS
V DS=40V, V GS=0V,
T j=25°C
V DS=18V, V GS=0V,
T j=85 °C2)
I GSS
RDS(on)
V GS=20V, V DS=0V
V GS=10V, I D=100A
40 -
-V
2.0 3.0 4.0
- 0.01 1 µA
- 3 36
- - 100 nA
- 3.2 3.6 mΩ
Rev. 1.1
page 2
2014-04-07



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IPB120N04S4-04
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics1)
D-85579 Neubiberg
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
V GS=0V, V DS=25V,
f =1MHz
- 3150 4100 pF
- 770 1000
- 30 70
t d(on)
- 11 - ns
tr
V DD=20V, V GS=10V,
-
18
-
t d(off)
I D=120A, R G=3.5W
-
9
-
t f - 15 -
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
Q gd V DD=32V, I D=120A,
Q g V GS=0 to 10V
-
-
-
20 26 nC
7 16
42 55
Gate plateau voltage
V plateau
- 6.0 - V
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
Diode forward voltage
Reverse recovery time1)
IS
I S,pulse
V SD
T C=25°C
V GS=0V, I F=100A,
T j=25°C
t rr
V R=20V, I F=I S,
di F/dt =100A/µs
- - 120 A
- - 480
- 0.9 1.3 V
- 45 - ns
Reverse recovery charge1)
Q rr
- 50 - nC
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2014-04-07



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IPB120N04S4-04
1 Power dissipation
P tot = f(T C); V GS ≥ 6 V
80
2 Drain current
I D = f(T C); V GS ≥ 6 V
120
100
60
80
40 60
40
20
20
0
0 50 100 150
T C [°C]
3 Safe operating area
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
1000
limited by on-state
resistance
1 µs
10 µs
100
0
200 0 50 100 150
T C [°C]
4 Max. transient thermal impedance
Z thJC = f(t p)
parameter: D =t p/T
101
100 0.5
200
10
1
0.1
Rev. 1.1
100 µs
1 ms
1 10
V DS [V]
100
10-1
0.1
0.05
0.01
single pulse
10-2
page 4
t p [s]
2014-04-07




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