IPA80R1K0CE Datasheet PDF - Infineon Technologies

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IPA80R1K0CE
Infineon Technologies

Part Number IPA80R1K0CE
Description MOSFET
Page 15 Pages


IPA80R1K0CE datasheet pdf
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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
800VCoolMOS™CEPowerTransistor
IPA80R1K0CE
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket



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800VCoolMOS™CEPowerTransistor
IPA80R1K0CE
1Description
CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower
MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance
andruggednesstoallowstabledesignsathighestefficiencylevel.
CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe
benefitofreducedsystemcostsandhigherpowerdensitydesigns.
Features
•Highvoltagetechnology
•Extremedv/dtrated
•Highpeakcurrentcapability
•Lowgatecharge
•Loweffectivecapacitances
•Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound
•Qualifiedforconsumergradeapplications
Applications
LEDLightingforretrofitapplicationsinQRFlybacktopology
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
TO-220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
800
950
V
m
Qg.typ
31
nC
ID,pulse
18
A
Eoss@400V
2.4
µJ
Body diode di/dt
400
A/µs
Type/OrderingCode
IPA80R1K0CE
Package
PG-TO 220 FullPAK
Marking
8R1K0CE
RelatedLinks
see Appendix A
Final Data Sheet
2 Rev.2.1,2015-06-23



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800VCoolMOS™CEPowerTransistor
IPA80R1K0CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3 Rev.2.1,2015-06-23



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800VCoolMOS™CEPowerTransistor
IPA80R1K0CE
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
Storage temperature
Operating junction temperature
Mounting torque
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
IS
IS,pulse
dv/dt
Maximum diode commutation speed
Insulation withstand voltage for
TO-220FP
dif/dt
VISO
Min.
-
-
-
-
-
-
-
-20
-30
-
-40
-40
-
-
-
-
-
-
Values
Typ. Max.
- 5.7
- 3.6
- 18
- 230
- 0.20
- 1.60
- 50
- 20
- 30
- 32
- 150
- 150
- 50
- 5.7
- 18
-4
- 400
- 2500
Unit Note/TestCondition
A
TC = 25°C
TC = 100°C
A TC=25°C
mJ ID=1.6A; VDD=50V; see table 10
mJ ID=1.6A; VDD=50V; see table 10
A-
V/ns VDS=0...640V
V static;
V AC (f>1 Hz)
W TC=25°C
°C -
°C -
Ncm M2.5 screws
A TC=25°C
A TC=25°C
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
V Vrms,TC=25°C,t=1min
1) Limited by Tj max <150°C.
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
4
Rev.2.1,2015-06-23



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