IPA60R650CE Datasheet PDF - Infineon Technologies


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IPA60R650CE
Infineon Technologies

Part Number IPA60R650CE
Description MOSFET
Page 16 Pages

IPA60R650CE datasheet pdf
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IPD60R650CE,IPA60R650CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R650CEisFullPAKmarkingonly
DPAK
tab
2
1
3
PG-TO220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
650
m
Id. 9.9 A
Qg.typ
20.5
nC
ID,pulse
19
A
Eoss@400V
1.9
µJ
Type/OrderingCode
IPD60R650CE
IPA60R650CE
Package
PG-TO 252
PG-TO 220 FullPAK
Marking
RelatedLinks
60S650CE / 6R650CE*
see Appendix A
Final Data Sheet
1 Rev.2.2,2016-08-08



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600VCoolMOSªCEPowerTransistor
IPD60R650CE,IPA60R650CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Final Data Sheet
2 Rev.2.2,2016-08-08



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600VCoolMOSªCEPowerTransistor
IPD60R650CE,IPA60R650CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation (Non FullPAK)
TO-251
Storage temperature
Operating junction temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
VGS
Ptot
Tstg
Tj
IS
IS,pulse
dv/dt
Maximum diode commutation speed
Power dissipation (FullPAK)
TO-220FP
Mounting torque (FullPAK)
TO-220FP
Insulation withstand voltage for
TO-220FP
dif/dt
Ptot
-
VISO
Min.
-
-
-
-
-
-
-
-20
-30
Values
Typ. Max.
- 9.9
- 6.2
- 19
- 133
- 0.20
- 1.3
- 50
- 20
- 30
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=1.3A; VDD=50V; see table 11
mJ ID=1.3A; VDD=50V; see table 11
A-
V/ns VDS=0...480V
V static;
V AC (f>1 Hz)
- - 82 W TC=25°C
-40 -
-40 -
--
--
--
--
150 °C -
150 °C -
7 A TC=25°C
19 A TC=25°C
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
- - 28 W TC=25°C
- - 50 Ncm M2.5 screws
-
-
2500 V
Vrms,TC=25°C,t=1min
2Thermalcharacteristics
Table3Thermalcharacteristics(FullPAK)TO-220FP
Parameter
Symbol
Values
Min. Typ. Max.
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
- - 4.5
- - 80
Soldering temperature, wavesoldering
only allowed at leads
Tsold
- - 260
Unit Note/TestCondition
°C/W -
°C/W leaded
°C 1.6mm (0.063 in.) from case for 10s
1) Limited by Tj max. TO252 equivalent, Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
3
Rev.2.2,2016-08-08



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600VCoolMOSªCEPowerTransistor
IPD60R650CE,IPA60R650CE
Table4ThermalcharacteristicsTO-252
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
Min.
-
-
Thermal resistance, junction - ambient
for SMD version
RthJA
-
Soldering temperature, wave & reflow
soldering allowed
Tsold
-
Values
Typ. Max.
- 1.52
- 62
35 45
- 260
Unit Note/TestCondition
°C/W -
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
°C/W
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
°C reflow MSL3
Final Data Sheet
4 Rev.2.2,2016-08-08




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