IDT71V416L Datasheet PDF - Integrated Device Technology

www.Datasheet-PDF.com

IDT71V416L
Integrated Device Technology

Part Number IDT71V416L
Description (IDT71V416L/S) .3V CMOS Static RAM 4 Meg
Page 9 Pages


IDT71V416L datasheet pdf
View PDF for PC
IDT71V416L pdf
View PDF for Mobile


No Preview Available !

3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
IDT71V416S
IDT71V416L
Features
256K x 16 advanced high-speed CMOS Static RAM
JEDEC Center Power / GND pinout for reduced noise.
Equal access and cycle times
– Commercial and Industrial: 10/12/15ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
LVTTL-compatible
Low power consumption via chip deselect
www.DataUSphpeeerta4nUd.cLoomwer Byte Enable Pins
Single 3.3V power supply
Available in 44-pin, 400 mil plastic SOJ package and a 44-
pin, 400 mil TSOP Type II package and a 48 ball grid array,
9mm x 9mm package.
Functional Block Diagram
Description
The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized
as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs.
The IDT71V416 has an output enable pin which operates as fast as
5ns, with address access times as fast as 10ns. All bidirectional inputs and
outputs of the IDT71V416 are LVTTL-compatible and operation is from a
single 3.3V supply. Fully static asynchronous circuitry is used, requiring
no clocks or refresh for operation.
The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a
44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x
9mm package.
Output
OE Enable
Buffer
A0 - A17
Address
Buffers
Chip
CS Select
Buffer
Write
WE Enable
Buffer
BHE
BLE
Byte
Enable
Buffers
©2004 Integrated Device Technology, Inc.
Row / Column
Decoders
4,194,304-bit
Memory
Array
8
Sense
16 Amps
and
Write
Drivers
8
8
8
High
Byte
Output
Buffer
High
Byte
Write
Buffer
Low
Byte
Output
Buffer
Low
Byte
Write
Buffer
8
8
8
8
I/O 15
I/O 8
I/O 7
I/O 0
3624 drw 01
JANUARY 2004
1
DSC-3624/09



No Preview Available !

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
Pin Configurations - SOJ/TSOP
A0 1
A1 2
A2 3
A3 4
A4 5
CS 6
I/O 0
7
I/O 1
8
I/O 2
9
I/O 3
10
VDD
11
VSS
12
I/O 4
13
www.DataShIe/Oet54U.com14
I/O 6
15
I/O 7
WE
16
17
A5 18
A6 19
A7 20
A8 21
A9 22
44 A17
43 A16
42 A15
41 OE
40 BHE
39 BLE
38 I/O 15
37 I/O 14
36 I/O 13
35 I/O 12
SO44-1
SO44-2
34
33
VSS
VDD
32 I/O 11
31 I/O 10
30 I/O 9
29 I/O 8
28 NC*
27 A14
26 A13
25 A12
24 A11
23 A10
Commercial and Industrial Temperature Ranges
Pin Configurations - 48 BGA
12 3 4 5 6
A BLE
OE
A0
A1
A2
NC
B I/O0
BHE
A3
A4
CS I/O8
C I/O1
I/O2
A5
A6
I/O10
I/O9
D VSS I/O3 A17
A7
I/O11
VDD
E VDD
I/O4
NC
A16 I/O12 VSS
F I/O6
I/O5
A14
A15
I/O13
I/O14
G I/O7 NC A12 A13 WE I/O15
H NC
A8
A9
A10 A11 NC
3624 tbl 11
3624 drw 02
*Pin 28 can either be a NC or connected to Vss
Top View
Pin Descriptions
A0 - A17
Address Inputs
CS Chip Select
WE Write Enable
OE Output Enable
BHE High Byte Enable
BLE Low Byte Enable
I/O0 - I/O15
Data Input/Output
VDD 3.3V Power
VSS Ground
Input
Input
Input
Input
Input
Input
I/O
Pwr
Gnd
3624 tbl 01
SOJ Capacitance
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
CIN Input Capacitance
CI/O I/O Capacitance
Conditions
VIN = 3dV
VOUT = 3dV
Max. Unit
7 pF
8 pF
3624 tbl 02
48 BGA Capacitance
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Conditions
Max. Unit
CIN
Input Capacitance
VIN = 3dV
6 pF
CI/O
I/O Capacitance
VOUT = 3dV
7 pF
NOTE:
3624 tbl 02b
1. This parameter is guaranteed by device characterization, but not production
tested.
6.422



No Preview Available !

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
Symbol
Rating
Value
Recommended Operating
Temperature and Supply
Unit Voltage
VDD Supply Voltage Relative to VSS
VIN, VOUT
Terminal Voltage Relative to
VSS
TBIAS Temperature Under Bias
TSTG Storage Temperature
-0.5 to +4.6
-0.5 to VDD+0.5
-55 to +125
-55 to +125
V
V
oC
oC
Grade
Com m ercial
Industrial
Temperature
0OC to +70OC
–40OC to +85OC
VSS VDD
0V See Below
0V See Below
3624 tbl 05
PT Power Dissipation
1W
IOUT DC Output Current
50 mA
3624 tbl 04
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
www.DatacSahuseeepte4rmUa.cneonmt damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating
Conditions
Symbol
Parameter
Min. Typ. Max.
VDD Supply Voltage
3.0 3.3
3.6
VSS Ground
00
0
VIH Input High Voltage
2.0 ____ VDD+0.3(1)
Unit
V
V
V
VIL Input Low Voltage
-0.3(2) ____
0.8
V
NOTES:
3624 tbl 06
1. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
2. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
Truth Table(1)
CS OE WE BLE
HXXX
L LHL
L LHH
L LHL
LX L L
LX L L
LX LH
L HHX
LXXH
NOTE:
1. H = VIH, L = VIL, X = Don't care.
BHE
X
H
L
L
L
H
L
X
H
I/O0-I/O7
High-Z
DATAOUT
High-Z
DATAOUT
DATAIN
DATAIN
High-Z
High-Z
High-Z
I/O8-I/O15
High-Z
High-Z
DATAOUT
DATAOUT
DATAIN
High-Z
DATAIN
High-Z
High-Z
Function
Deselected - Standby
Low Byte Read
High Byte Read
Word Read
Word Write
Low Byte Write
High Byte Write
Outputs Disabled
Outputs Disabled
3624 tbl 03
6.342



No Preview Available !

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
IDT71V416
Symbol
Parameter
Test Conditions
Min. Max. Unit
|ILI| Input Leakage Current
|ILO| Output Leakage Current
VCC = Max., VIN = VSS to VDD
VDD = Max., CS = VIH, VOUT = VSS to VDD
___ 5 µ A
___ 5 µ A
VOL Output Low Voltage
IOL = 8mA, VDD = Min.
___ 0.4 V
VOH Output High Voltage
IOH = -4mA, VDD = Min.
2.4 ___ V
3624 tbl 07
DC Electrical Characteristics(1, 2, 3)
(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)
www.DataSheet4U.com
Symbol
Parameter
71V416S/L10
Com'l. Ind.(5)
71V416S/L12
Com'l. Ind.
71V416S/L15
Com'l. Ind.
Unit
ICC Dynamic Operating Current
S 200 200 180 180 170 170 mA
CS < VLC, Outputs Open, VDD = Max., f = fMAX(4)
L 180 — 170 170 160 160
ISB Dynamic Standby Power Supply Current
S 70 70 60 60 50 50 mA
CS > VHC, Outputs Open, VDD = Max., f = fMAX(4)
L 50 — 45 45 40 40
ISB1 Full Standby Pow er Supply Current (static)
CS > VHC, Outputs Open, VDD = Max., f = 0(4)
S 20 20 20 20 20 20 mA
L 10 — 10 10 10 10
NOTES:
1. All values are maximum guaranteed vaIDlueTs.71V416S/71V416L
2. All inputs switch between 0.2V (Low) and VDD -0.2V (High).
3. Power specifications are preliminary.
4. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.
5. Standard power 10ns (S10) speed grade only.
3624 tbl 08
AC Test Loads
I/O Z0 = 50
+1.5V
50
30pF
Figure 1. AC Test Load
3624 drw 03
7
6
tAA, tACS
(Typical, ns) 5
4
3
2
1
8 20 40 60 80 100 120 140 160 180 200
CAPACITANCE (pF)
3624 drw 05
Figure 3. Output Capacitive Derating
DATA OUT
5pF*
3.3V
320
350
3624 drw 04
*Including jig and scope capacitance.
Figure 2. AC Test Load
(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
1.5ns
1.5V
1.5V
Figures 1,2 and 3
3624 tbl 09
6.442



IDT71V416L datasheet pdf
Download PDF
IDT71V416L pdf
View PDF for Mobile


Related : Start with IDT71V416 Part Numbers by
IDT71V416 3.3V CMOS STATIC RAM 4 MEG (256K x 16-BIT) IDT71V416
Integrated Device Technology
IDT71V416 pdf
IDT71V416L (IDT71V416L/S) .3V CMOS Static RAM 4 Meg IDT71V416L
Integrated Device Technology
IDT71V416L pdf
IDT71V416S (IDT71V416L/S) .3V CMOS Static RAM 4 Meg IDT71V416S
Integrated Device Technology
IDT71V416S pdf
IDT71V416VL (IDT71V416VL/VS) 3.3V CMOS Static RAM 4 Meg IDT71V416VL
Integrated Device Technology
IDT71V416VL pdf
IDT71V416VS (IDT71V416VL/VS) 3.3V CMOS Static RAM 4 Meg IDT71V416VS
Integrated Device Technology
IDT71V416VS pdf
IDT71V416YL (IDT71V416YL/YS) 3.3V CMOS Static RAM 4 Meg IDT71V416YL
Integrated Device Technology
IDT71V416YL pdf
IDT71V416YS (IDT71V416YL/YS) 3.3V CMOS Static RAM 4 Meg IDT71V416YS
Integrated Device Technology
IDT71V416YS pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact