HZS1 Datasheet PDF - Hitachi

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HZS1
Hitachi

Part Number HZS1
Description Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
Page 6 Pages


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HZS Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
ADE-208-120A(Z)
Rev 1
Features
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS Series
Mark
Type No.
Package Code
MHD
Outline
B
12
2
Type No.
Cathode band
1. Cathode
2. Anode



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HZS Series
Absolute Maximum Ratings (Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
200
-55 to +175
Unit
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Zener Voltage
Type
Grade
V (V)*1
Z
Min
HZS1
C3
1.5
HZS2
A1
1.6
A2 1.7
A3 1.8
B1 1.9
B2 2.0
B3 2.1
C1 2.2
C2 2.3
C3 2.4
HZS3
A1
2.5
A2 2.6
A3 2.7
B1 2.8
B2 2.9
B3 3.0
C1 3.1
C2 3.2
C3 3.3
HZS4
A1
3.4
A2 3.5
A3 3.6
Note: 1. Tested with DC.
Max
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
Reverese Current Dynamic Resistance
Test
Condition
I
R
(µA)
IZ (mA) Max
5 25
Test
Condition
r
d
()
VR (V)
Max
0.5 100
Test
Condition
IZ (mA)
5
5 25 0.5 100 5
5 5 0.5 100 5
5 5 0.5 100 5
5 5 1.0 100 5
2



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HZS Series
Zener Voltage
Type
Grade
V (V)*1
Z
Min
HZS4
B1
3.7
B2 3.8
B3 3.9
C1 4.0
C2 4.1
C3 4.2
HZS5
A1
4.3
A2 4.4
A3 4.5
B1 4.6
B2 4.7
B3 4.8
C1 4.9
C2 5.0
C3 5.1
HZS6
A1
5.2
A2 5.3
A3 5.4
B1 5.5
B2 5.6
B3 5.7
C1 5.8
C2 6.0
C3 6.1
HZS7
A1
6.3
A2 6.4
A3 6.6
B1 6.7
B2 6.9
B3 7.0
Note: 1. Tested with DC.
Max
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.5
5.6
5.7
5.8
5.9
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
Reverese Current Dynamic Resistance
Test
Condition
I
R
(µA)
IZ (mA) Max
55
Test
Condition
r
d
()
VR (V)
Max
1.0 100
Test
Condition
IZ (mA)
5
5 5 1.5 100 5
5
5
2.0 40
5
5
1
3.5 15
5
3



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HZS Series
Zener Voltage
Type
Grade
V (V)*1
Z
Min
HZS7
C1
7.2
C2 7.3
C3 7.5
HZS9
A1
7.7
A2 7.9
A3 8.1
B1 8.3
B2 8.5
B3 8.7
C1 8.9
C2 9.1
C3 9.3
HZS11 A1
9.5
A2 9.7
A3 9.9
B1 10.2
B2 10.4
B3 10.7
C1 10.9
C2 11.1
C3 11.4
HZS12 A1
11.6
A2 11.9
A3 12.2
B1 12.4
B2 12.6
B3 12.9
C1 13.2
C2 13.5
C3 13.8
Note: 1. Tested with DC.
Max
7.6
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
12.1
12.4
12.7
12.9
13.1
13.4
13.7
14.0
14.3
Reverese Current Dynamic Resistance
Test
Condition
I
R
(µA)
IZ (mA) Max
51
Test
Condition
r
d
()
VR (V)
Max
3.5 15
Test
Condition
IZ (mA)
5
5
1
5.0 20
5
5
1
7.5 25
5
5
1
9.5 35
5
4



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