HYMD132645BL8-K Datasheet PDF - Hynix Semiconductor


Hynix Semiconductor

Part Number HYMD132645BL8-K
Description 32M x 64 bits Unbuffered DDR SDRAM DIMM
Page 17 Pages

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32Mx64 bits
Hynix HYMD132645B(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line
Memory Modules (DIMMs) which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD132645B(L)8-M/K/
H/L series consists of sixteen 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate.
Hynix HYMD132645B(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of
industry standard. It is suitable for easy interchange and addition.
Hynix HYMD132645B(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous
operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control
inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on
both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high
bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable
latencies and burst lengths allow variety of device operation in high performance memory system.
Hynix HYMD132645B(L)8-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function is
implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify
DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.
• 256MB (32M x 64) Unbuffered DDR DIMM based on
• JEDEC Standard 184-pin dual in-line memory module
• 2.5V +/- 0.2V VDD and VDDQ Power supply
• All inputs and outputs are compatible with SSTL_2
• Fully differential clock operations (CK & /CK) with
• All addresses and control inputs except Data, Data
strobes and Data masks latched on the rising edges
of the clock
• Data(DQ), Data strobes and Write masks latched on
both rising and falling edges of the clock
• Data inputs on DQS centers when write (centered
• Data strobes synchronized with output data for read
and input data for write
• Programmable CAS Latency 2 / 2.5 supported
• Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
• tRAS Lock-out function supported
• Internal four bank operations with single pulsed RAS
• Auto refresh and self refresh supported
• 4096 refresh cycles / 64ms
Part No.
Power Supply
Clock Frequency
Form Factor
133MHz (*DDR266:2-2-2)
133MHz (*DDR266A)
133MHz (*DDR266B)
125MHz (*DDR200)
184pin Unbuffered DIMM
5.25 x 1.25 x 0.15 inch
* JEDEC Defined Specifications compliant
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.3/May. 02

HYMD132645BL8-K datasheet pdf
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