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Part Number

HYG072N10LS1S

Manufacturer HUAYI
Short Description N-Channel Enhancement Mode MOSFET
Long Description HYG072N10LS1S Feature  100V/14A RDS(ON)= 7.2 mΩ(typ.) @ VGS = 10V RDS(ON)= 10 mΩ(typ.) @ VGS = 4.5V  100% Avalan

Datasheet : HYG072N10LS1S



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