HY4903P Datasheet PDF - HOOYI


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HY4903P
HOOYI

Part Number HY4903P
Description N-Channel Enhancement Mode MOSFET
Page 11 Pages

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HY4903P/B
N-Channel Enhancement Mode MOSFET
Features
30V/290A
RDS(ON)= 1.6m(typ.) @ VGS=10V
100% EAS Guaranteed
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
Halogen - Free Device Available
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-263-2L
Applications
High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Ordering and Marking Information
D
G N-Channel MOSFET
S
PB
HY4903 HY4903
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
Date Code
YYXXX WW
B: TO-263-2L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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HY4903P/B
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
TC=25°C
TC=25°C
TC=100°C
TC=25°C
Tc=100°C
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
EAS Avalanche Energy,Single Pulsed
L=0.5mH
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=24V
Rating
30
±20
175
-55 to 175
290
1000**
290
200
214
107
0.7
62.5
1325***
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) * Drain-Source On-state Resistance
Diode Characteristics
VSD * Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
HY4903
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
30 -
-V
VDS=30V, VGS=0V
TJ=85°C
-
-
-1
µA
- 30
VDS=VGS, IDS=250µA
1.0 - 3.0 V
VGS=±20V, VDS=0V
- - ±100 nA
VGS=10V, IDS=145A
- 1.6 2.0 m
VGS=4.5V, IDS=145A
2.0 3.0 m
ISD=145 A, VGS=0V
IDS=145A, dlSD/dt=100A/µs
-
-
-
0.8 1.0 V
38 - ns
80 - nC
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HY4903P/B
Electrical Characteristics (Cont.)
(T
C
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=15V, R G= 3.3 ,
IDS =145A, VGS=10 V,
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=24V, VGS= 10 V,
I DS =145A
Note * : Pulse test ; pulse width 300µs, duty cycle2%.
.
HY4903
Min. Typ. Max.
- 0.5
-
- 11506 -
- 1236 -
- 762 -
- 52
-
- 120 -
- 90 -
- 78
-
- 247 -
- 27 -
- 58
-
Unit
pF
ns
nC
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HY4903P/B
Typical Operating Characteristics
Power Dissipation
Drain Current
250
200
150
100
50
T =25oC
C
0
0 20 40 60 80 100 120 140 160 180 200
Tc - Case Temperature (°C)
350
300 limited by package
250
200
150
100
50
T =25oC,V =10V
0C
G
0 20 40 60 80 100 120 140 160 180 200
Tc- Case Temperature (°C)
1000
100
Safe Operation Area
Rds(on) Limit
100us
1ms
10ms
10
DC
1
0.1
1 10 100
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
1
Duty = 0.5
0.1 0.2
0.1
0.01
0.05
0.02
0.001
0.01
Single
0.0001
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (sec)
4
400
Mounted on minimum pad
R :62.5oC/W
θJA
1
10
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