HY1001P Datasheet PDF - HOOYI


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HY1001P
HOOYI

Part Number HY1001P
Description N-Channel Enhancement Mode MOSFET
Page 10 Pages

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HY1001M/P
N-Channel Enhancement Mode MOSFET
Features
70V/75A,
RDS(ON)=7.8m(typ.) @ VGS=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Power Management for Inverter Systems.
S
D
G
G
D
S
TO-220
D
G
Ordering and Marking Information
S
N-Channel MOSFET
P
HY1001
ÿ YYWWJ G
Package Code
P : TO220-3L
Date Code
YYWW
Assembly Material
G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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HY1001M/P
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
IDP 300µs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
EAS Avalanche Energy, Single Pulsed
L=0.3mH,VD=50V
Rating
70
25
175
-55 to 175
75
290
75
70
105
75
0.5
62.5
580
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Electrical Characteristics
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS=0V, IDS=250µA
VDS=75V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=40A
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
Min.
70
-
-
2
-
-
-
-
-
HY1001M/P
Typ. Max.
--
-1
- 10
34
- ±100
7.8 9
0.8 1
100 -
380 -
Unit
V
µA
V
nA
m
V
ns
nC
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HY1001M/P
Electrical Characteristics (Cont.)
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics b
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics b
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30,
IDS=1A, VGEN=10V,
RG=6
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=40A
Note a : Pulse test ; pulse width300µs, duty cycle2%.
Note b : Guaranteed by design, not subject to production testing.
HY1001M/P
Min. Typ. Max.
- 0.82 -
- 3150 -
- 300
-
- 240 -
- 18.2 -
- 15.6 -
- 70.5 -
- 13.8 -
- 83 -
- 8.9 -
- 24.3 -
Unit
pF
ns
nC
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HY1001M/P
Typical Operating Characteristics
Power Dissipation
350
150
125
100
75
50
25
T =25oC
C
0
0 20 40 60 80 100 120 140 160 180 200
Tj - Junction Temperature (°C)
Drain Current
90
80
70
60
50
40
30
20
10
T =25oC,V =10V
0C
G
0 20 40 60 80 100 120 140 160 180 200
Tj - Junction Temperature (°C)
Safe Operation Area
600
10ms
100 100ms
1s
10
DC
1
T =25oC
0.1 C
0.01 0.1 1 10 100 500
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
Single Pulse
1E-3
1E-4 1E-3 0.01
Mounted on minimum pad
R :62.5oC/W
θJA
0.1 1 10 100
Square Wave Pulse Duration (sec)
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