HSMS-2800 Datasheet PDF - AVAGO

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HSMS-2800
AVAGO

Part Number HSMS-2800
Description Surface Mount RF Schottky Barrier Diodes
Page 10 Pages


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HSMS-280x
Surface Mount RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for both
analog and digital applications. This series offers a wide
range of specifications and package configurations to
give the designer wide flexibility. The HSMS-280x series
of diodes is optimized for high voltage applications.
Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent sites
on the wafer, assuring the highest degree of match.
Features
x Surface Mount Packages
x High Breakdown Voltage
x Low FIT (Failure in Time) Rate*
x Six-sigma Quality Level
x Single, Dual and Quad Versions
x Tape and Reel Options Available
x Lead-free
* For more information see the Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code Identification, SOT-323 (Top View)
SINGLE
SERIES
Package Lead Code Identification, SOT-363 (Top View)
HIGH ISOLATION
UNCONNECTED PAIR
654
UNCONNECTED
TRIO
654
B
COMMON
ANODE
E
C
COMMON
CATHODE
F
Package Lead Code Identification, SOT-23/SOT-143 (Top View)
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
123
K
COMMON
CATHODE QUAD
654
123
M
BRIDGE
QUAD
654
123
P
123
L
COMMON
ANODE QUAD
654
123
N
RING
QUAD
654
123
R
12
#0
UNCONNECTED
PAIR
34
12
#2
BRIDGE
QUAD
34
12
#3
12
#4
1 #5 2
1 #8 2



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Pin Connections and Package Marking, SOT-363
Notes:
1 6 1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
25
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
34
Absolute Maximum Ratings[1] TC = 25°C
Symbol
Parameter
If Forward Current (1 μs Pulse)
PIV Peak Inverse Voltage
Tj Junction Temperature
Tstg Storage Temperature
Tjc Thermal Resistance[2]
Unit SOT-23/SOT-143 SOT-323/SOT-363
Amp 1
1
V Same as VBR
°C 150
Same as VBR
150
°C -65 to 150
-65 to 150
°C/W 500
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications TA = 25°C, Single Diode [3]
Part
Number
HSMS[4]
2800
2802
2803
2804
2805
2808
280B
280C
280E
280F
Package
Marking
Code
A0
A2
A3
A4
A5
A8
A0
A2
A3
A4
280K
AK
280L
AL
280M
H
280N
N
280P
AP
280R
O
Test Conditions
Lead
Code Configuration
0 Single
Minimum
Breakdown
Voltage
VBR (V)
2 Series
3 Common Anode
4 Common Cathode
5 Unconnected Pair
8 Bridge Quad[4]
B Single
C Series
E Common Anode
70
F Common Cathode
K
High Isolation
Unconnected Pair
L Unconnected Trio
M Common Cathode Quad
N Common Anode Quad
P Bridge Quad
R Ring Quad
IR = 10 mA
Maximum
Forward
Voltage
VF (mV)
410
IF = 1 mA
Maximum
Forward
Voltage
VF (V) @ IF (mA)
Maximum
Reverse
Leakage
IR (nA) @ VR (V)
1.0 @ 15
200 @ 50
Notes:
1. DVF for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. DCTO for diodes in pairs and quads is 0.2 pF maximum.
3. Effective Carrier Lifetime (t) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. RD = RS + 5.2 Ω at 25°C and If = 5 mA.
Maximum
Capacitance
CT (pF)
2.0
VF = 0 V
f = 1 MHz
Typical
Dynamic
Resistance
RD (Ω)[5]
35
IF = 5 mA
2



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Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing
accurate capacitance measurement of each branch or
each diode. The conditions are: 20 mV R.M.S. voltage at 1
MHz. Avago defines this measurement as “CM”, and it is
equivalent to the capacitance of the diode by itself. The
equivalent diagonal and adjacent capacitances can then
be calculated by the formulas given below.
In a quad, the diagonal capacitance is the capacitance
between points A and B as shown in the figure below.
The diagonal capacitance is calculated using the follow-
ing formula
CDIAGONAL = __C_1_x__C_2 + ___C_3_x_C_4
C1 + C2 C3 + C4
A
C1 C3
C
C2 C4
B
The equivalent adjacent capacitance is the capacitance
between points A and C in the figure below. This capaci-
tance is calculated using the following formula
CADJACENT = C1 + _______1_____
–1– + –1– + –1–
C2 C3 C4
This information does not apply to cross-over quad
diodes.
Linear Equivalent Circuit, Diode Chip
Rj
RS
Cj
RS = series resistance (see Table of SPICE parameters)
C j = junction capacitance (see Table of SPICE parameters)
Rj =
8.33 X 10-5 nT
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-280x product,
please refer to Application Note AN1124.
SPICE Parameters
Parameter Units
BV V
CJ0 pF
EG eV
IBV A
IS A
N
RS Ω
PB V
PT
M
HSMS-280x
75
1.6
0.69
E-5
3.00E-08
1.08
30
0.65
2
0.5
3



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Typical Performance, TC = 25°C (unless otherwise noted), Single Diode
100 100,000
10
1
0.1
0.01
0
TA = +125C
TA = +75C
TA = +25C
TA = –25C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF – FORWARD VOLTAGE (V)
Figure 1. Forward Current vs. Forward Voltage
at Temperatures.
10,000
1000
100
10 TA = +125C
TA = +75C
1 TA = +25C
0 10 20 30 40 50
VR – REVERSE VOLTAGE (V)
Figure 2. Reverse Current vs. Reverse Voltage
at Temperatures.
1000
100
10
1
0.1 1
10 100
IF – FORWARD CURRENT (mA)
Figure 3. Dynamic Resistance vs. Forward
Current.
2 30 30
1.5
10
IF (Left Scale)
10
1
VF (Right Scale)
0.5 1 1
0
0 10 20 30 40
VR – REVERSE VOLTAGE (V)
Figure 4. Total Capacitance vs. Reverse
Voltage.
50
0.3 0.3
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF - FORWARD VOLTAGE (V)
Figure 5. Typical Vf Match, Pairs and Quads.
4



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