HSMP-386J Datasheet PDF - AVAGO


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HSMP-386J
AVAGO

Part Number HSMP-386J
Description High Power RF PIN Diode
Page 6 Pages

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HSMP-386J
High Power RF PIN Diode
Data Sheet
Description
Avago Technologies' HSMP-386J is a High Power RF PIN
Diode specifically design for high power handling and low
distortion Transmit/Receive switching application. It is
housed in QFN 2x2mm size package which is having good
thermal resistance.
The unique with 8 dies in parallel configuration results to
low IL performance and low series resistance. The HSMP-
386J Power diode is built with match diode to ensure con-
sistency in performance.
Package Marking & Orientation
Pin#1
Not Used
Anode
Pin#1
Cathode
Top view
Bottom view
Notes:
6P = Device Code
x = Month code indicates the month of manufacture
Features
High Power Surface Mount Package QFN 2x2
Match Diode for Consistent Performance
Low Bias Current Requirement
Low Series Resistance
Low Insertion Loss & High Isolation
Better Thermal Conductivity for Higher Power Dissipation
Low Failure in Time (FIT) Rate
Lead-free Option Available
MSL1 & Lead Free
Tape & Reel Option Available
Specifications
Low RS Switching typically 0.65Ω @ 100MHz., 50mA
High Power Handling Up to 10W (40dBm) at 2GHz,
50mA
Application
High Power Transmit / Receive Switch for Cellular
Infrastructure and Two Way Radio
Circuit Diagram of HSMP-386J
Pin #1
Cathode
Anode
Connected externally
on PCB board



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Table 1. Absolute Maximum Ratings [1] at TC = +25°C
Symbol
Parameter
Unit Max Rating
IF
Forward Current (1µs Pulse) per die [2]
Amp
1
PIV Peak Inverse Voltage
Tj Junction Temperature
V
°C
100
150
Tstg Storage Temperature
°C
-60 to 150
θjc Thermal Resistance [3]
°C/W
45
DC Pdiss
DC Power Dissipation [4]
W
2.0
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. Eight dice are connected in parallel for this device.
3. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
4. Maximum DC Pdiss measured without RF input and maximum rating is base on device junction temperature.
Pdiss
=
T
(Max.Operating) - 25 °C
Thermal Resistance
Table 2. Electrical Performance at TC = +25°C
Minimum
Breakdown Voltage
VBR (V)
100
Test Conditions
VR = VBR
Measure IR ≤ 5uA
Typical
Forward Voltage
Vf (V)
0.85
IF = 50mA
Maximum
Series Resistance
RS (Ohm)
0.77
IF = 50 mA
f = 100 MHz
Maximum
Total Capacitance
CT (pF)
1.25
VR = 50V
f = 1MHz
Table 3. Typical Performance at TC = +25°C
Series Resistance
RS (W)
0.65
Test Conditions
IF = 50mA
f = 100MHz
Carrier Lifetime
(nS)
260
IF = 50mA
IR = 100mA
Reverse Recovery Time
Trr (nS)
130
VR = 5V
IF = 50mA
90% Recovery
Total Capacitance
CT (pF)
0.75
VR = 50V
f = 1MHz




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100.0
10.0
T = -55 C
T = 25 C
T = 85 C
1000
T = -55 C
T = 25 C
T = 85 C
100
1.0 10
0.1 1
0.0
0.0
0.2 0.4 0.6 0.8
VF - FORWARD VOLTAGE (V)
1.0
0
0
1 10
BIAS CURRENT (mA)
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Typical RF Resistance vs. Forward Bias Current.
100
2.5
2.0
1.5
1.0
0.5
0.0
0
5 10 15 20
REVERSE VOLTAGE (V)
Figure 3. RF Capacitance vs. Reverse Bias Voltage
25
30
80
70
60
50
40
30
20
25 30 35
INPUT POWER (dBm)
Figure 4. Input Power vs. Junction Temperature [1]
40
45
Notes:
1. Test conditions: f = 2.1GHz, IF = 50mA
2. Typical values were derived using limited samples during initial product characterization and may not be representative of the overall
distribution.




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QFN 2x2 Package Dimension
Pin 1 Dot
By Marking
2.000±0.050
2.000±0.050
6Px
Top View
0.800±0.050
Exp.DAP
PIN #1
Identification
0.1500
0.500 Bsc
1.600±0.050
Exp.DAP
1.500 Ref.
0.250±0.050
0.250
0.400±0.050
Bottom View
Note:
1. All dimensions in millimeters.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash and metal burr.
0.750±0.050
0.203 Ref.
0.000-0.050
Side View
0.250
Top View





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