HQP1498QF Datasheet PDF - CYStech Electronics


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HQP1498QF
CYStech Electronics

Part Number HQP1498QF
Description Quadruple High Voltage PNP Epitaxial Planar Transistor Built-in Base Resistor
Page 6 Pages

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CYStech Electronics Corp.
Quadruple High Voltage PNP Epitaxial Planar Transistor
Built-in Base Resistor
HQP1498QF
Spec. No. : C900QF
Issued Date : 2009.10.30
Revised Date : 2009.11.20
Page No. : 1/6
Description
High breakdown voltage. (BVCEO=-400V)
Low saturation voltage, typical VCE(sat) =-0.3V at Ic/IB =-20mA/-1mA.
Complementary to HQN2498QF
Pb-free package
Equivalent Circuit
HQP1498QF
Outline
SOP-10
The following ratings and characteristics apply to each transistor in this
device.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
-400
-400
-7
-300
1.5
150
-55~+150
Unit
V
V
V
mA
W
°C
°C
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CYStech Electronics Corp.
Spec. No. : C900QF
Issued Date : 2009.10.30
Revised Date : 2009.11.20
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE
*hFE
R
fT
Cob
Min.
-400
-400
-7
-
-
-
-
-
-
100
30
0.7
-
-
Typ.
-
-
-
-
-
-
-0.3
-0.7
-
-
-
-
100
13
Max.
-
-
-
-100
-10
-100
-0.5
-0.9
-3.7
270
-
1.3
-
-
Unit
V
V
V
nA
nA
nA
V
V
V
-
-
kΩ
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-400V
VCE=-300V, REB=4kΩ
VEB=-6V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-100mA
-
VCE=-10V, IC=-10mA, f=5MHz
VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
HQP1498QF
Package
SOP-10
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
P1498
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CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C900QF
Issued Date : 2009.10.30
Revised Date : 2009.11.20
Page No. : 3/6
Current Gian vs Collector Current
1000
10000
Saturation Voltage vs Collector Current
100
10
1
VCE = 10V
VCE = 5V
10
Collector Current---IC (mA)
100
1000
VCE(SAT) @ IC = 20IB
100
10
1
VCE(SAT) @ IC =10IB
10
Collector Current---IC (mA)
100
10000
Saturation Voltage vs Collector Current
VBE(SAT) @ IC = 10IB
1000
100
1
10
Collector Current---IC(mA)
100
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Power Derating Curve
Total power dissipation
per package
Power dissipation per
transistor
50 100 150
Ambient Temperature---TA(℃)
200
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Reel Dimension
CYStech Electronics Corp.
Spec. No. : C900QF
Issued Date : 2009.10.30
Revised Date : 2009.11.20
Page No. : 4/6
Carrier Tape Dimension
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