HQN2498QF Datasheet PDF - CYStech Electronics


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HQN2498QF
CYStech Electronics

Part Number HQN2498QF
Description Quadruple High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor
Page 6 Pages

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CYStech Electronics Corp.
Quadruple High Voltage NPN Epitaxial Planar Transistor
Built-in Base Resistor
HQN2498QF
Spec. No. : C899QF
Issued Date : 2009.11.09
Revised Date : 2009.12.23
Page No. : 1/6
Description
High breakdown voltage. (BVCEO=400V)
Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA.
Complementary to HQP1498QF
Pb-free package
Equivalent Circuit
HQN2498QF
Outline
SOP-10
The following ratings and characteristics apply to each transistor in this
device.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
400
400
7
300
1.5
150
-55~+150
Unit
V
V
V
mA
W
°C
°C
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CYStech Electronics Corp.
Spec. No. : C899QF
Issued Date : 2009.11.09
Revised Date : 2009.12.23
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE
*hFE
R
fT
Cob
Min.
400
400
7
-
-
-
-
-
-
-
50
50
0.7
-
-
Typ.
-
-
-
-
-
-
0.13
0.11
0.16
-
-
-
-
100
13
Max.
-
-
-
100
10
100
0.18
0.18
0.3
3.7
270
-
1.3
-
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
kΩ
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=400V
VCE=300V, REB=4kΩ
VEB=6V
IC=20mA, IB=1mA
IC=50mA, IB=5mA
IC=100mA, IB=10mA
IC=20mA, IB=2mA
VCE=10V, IC=10mA
VCE=10V, IC=100mA
-
VCE=10V, IC=10mA, f=5MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
HQN2498QF
Package
SOP-10
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
N2498
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CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C899QF
Issued Date : 2009.11.09
Revised Date : 2009.12.23
Page No. : 3/6
Current Gian vs Collector Current
100
100000
Saturation Voltage vs Collector Current
VCE = 10V
10000
1000
VCE(SAT) @ IC = 20IB
10
1
10000
1000
VCE = 5V
10 100
Collector Current---IC (mA)
1000
Saturation Voltage vs Collector Current
IC=10IB
IC=20IB
VBE(SAT)
100
1
10 100
Collector Current---IC (mA)
1000
100
10
1
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
VCE(SAT) @ IC =10IB
10 100
Collector Current---IC(mA)
Power Derating Curve
1000
Total power dissipation
per package
Power dissipation per
transistor
50 100 150
Ambient Temperature---TA(℃)
200
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Reel Dimension
CYStech Electronics Corp.
Spec. No. : C899QF
Issued Date : 2009.11.09
Revised Date : 2009.12.23
Page No. : 4/6
Carrier Tape Dimension
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