HMC498LC4 Datasheet PDF - Hittite Microwave Corporation


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HMC498LC4
Hittite Microwave Corporation

Part Number HMC498LC4
Description GaAs PHEMT MEDIUM POWER AMPLIFIER 17 - 24 GHz
Page 6 Pages

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v00.0904
HMC498LC4
www.DataSheet4U.com
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 17 - 24 GHz
5
Typical Applications
Features
The HMC498LC4 is ideal for use as a LNA or Driver
amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military End-Use
+36 dBm Output IP3
Saturated Power: +26 dBm @ 23% PAE
22 dB Gain
+5.0 V @ 250 mA Supply
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm SMT Package
Functional Diagram
General Description
The HMC498LC4 is a high dynamic range GaAs
PHEMT MMIC Medium Power Amplifier housed in a
leadless “Pb free” SMT package. Operating from 17
to 24 GHz, the amplifier provides 22 dB of gain, +26
dBm of saturated power and 23% PAE from a +5.0 V
supply voltage. Noise figure is 4 dB while output IP3 is
+36 dBm typical enabling the HMC498LC4 to function
as a low noise front end as well as a driver amplifier.
The RF I/Os are DC blocked and matched to 50 Ohms
for ease of use. The HMC498LC4 eliminates the
need for wire bonding, allowing use of surface mount
manufacturing techniques.
Electrical Specifications, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 250 mA*
Parameter
Min.
Typ. Max. Min.
Typ. Max. Min.
Frequency Range
17 - 19
19 - 23
Gain
18 22
20 22.5
18
Gain Variation Over Temperature
0.02 0.03
0.02 0.03
Input Return Loss
13 13
Output Return Loss
15 15
Output Power for 1 dB Compression (P1dB)
22 25
21.5 24.5
22.5
Saturated Output Power (Psat)
26.5
25.5
Output Third Order Intercept (IP3)
35 36
Noise Figure
4.0 4.0
Supply Current (Idd)(Vdd = +5V, Vgg = -0.8V
Typ.)
250
250
* Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical.
Typ.
23 - 24
21
0.02
10
20
25.5
26.5
35.5
4.5
250
Max.
0.03
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
5 - 512
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com



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v00.0904
Broadband Gain & Return Loss
25
20
15
10
S21
5 S11
0 S22
-5
-10
-15
-20
-25
12 14 16 18 20 22 24
FREQUENCY (GHz)
26
28
Input Return Loss vs. Temperature
0
+25 C
+85 C
-5 -40 C
-10
-15
-20
16 17 18 19 20 21 22 23 24 25
FREQUENCY (GHz)
P1dB vs. Temperature
30
28
26
24
22
20
18
+25 C
16 +85 C
14 -40 C
12
10
16 17 18 19 20 21 22 23 24 25
FREQUENCY (GHz)
HMC498LC4
www.DataSheet4U.com
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 17 - 24 GHz
Gain vs. Temperature
26
24
22
20
18
16 +25 C
14 +85 C
-40 C
12
10
16 17 18 19 20 21 22 23 24 25
FREQUENCY (GHz)
5
Output Return Loss vs. Temperature
0
+25 C
-5 +85 C
-40 C
-10
-15
-20
-25
16 17 18 19 20 21 22 23 24 25
FREQUENCY (GHz)
Psat vs. Temperature
30
28
26
24
22
20
18
+25 C
16 +85 C
14 -40 C
12
10
16 17 18 19 20 21 22 23 24 25
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 513



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v00.0904
5
Output IP3 vs. Temperature
40
38
36
34
32
30
28
+25 C
26 +85 C
24 -40 C
22
20
16 17 18 19 20 21 22 23 24 25
FREQUENCY (GHz)
Gain, Power & OIP3
vs. Supply Voltage @ 23 GHz
40
38
36
34
32 Gain
P1dB
30 Psat
OIP3
28
26
24
22
20
4.5
5
Vdd Supply Voltage (Vdc)
5.5
Power Compression @ 18GHz
30
28
26
24
22
20
18
16
14
12
10
8 Pout (dBm)
6 Gain (dB)
4 PAE (%)
2
0
-10 -8 -6 -4 -2 0 2 4 6 8 10
INPUT POWER (dBm)
HMC498LC4
www.DataSheet4U.com
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 17 - 24 GHz
Noise Figure vs. Temperature
10
9 +25 C
8 +85 C
7 -40 C
6
5
4
3
2
1
0
16 17 18 19 20 21 22 23 24 25
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
-20
+25 C
+85 C
-30 -40 C
-40
-50
-60
-70
16 17 18 19 20 21 22 23 24 25
FREQUENCY (GHz)
Power Compression @ 23 GHz
30
28
26
24
22
20
18
16
14
12
10
8 Pout (dBm)
6 Gain (dB)
4 PAE (%)
2
0
-10 -8 -6 -4 -2 0 2 4 6 8 10
INPUT POWER (dBm)
5 - 514
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com



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v00.0904
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg)
RF Input Power (RFin)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 18 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
-4.0 to 0 Vdc
+10 dBm
175 °C
1.62 W
55.6 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
HMC498LC4
www.DataSheet4U.com
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 17 - 24 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
239
250
262
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 250 mA at +5.0V.
5
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN.
6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 515




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