HMC140 Datasheet PDF - HITTITE

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HMC140
HITTITE

Part Number HMC140
Description GaAs MMIC DOUBLE-BALANCED MIXER
Page 4 Pages


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MICROWAVE CORPORATION
HMC140
GaAs MMIC DOUBLE-BALANCED MIXER 1.0 - 2.0 GHz
SEPTEMBER 1999
Features
General Description
CONVERSION LOSS: 10 dB
LO TO RF ISOLATION: 40 dB
PASSIVE : NO DC BIAS REQ'D
4
The HMC140 chip is a miniature double-
balanced mixer which can be used as an
upconverter or downconverter. The chip is
especially suitable for Telecom and EW /
ECM applications because of its small size
and consistent IC performance. The chip
can be integrated directly into hybrid MICs
without DC bias or external baluns to pro-
vide an extremely compact mixer.
Guaranteed Performance With LO Drive of +13 dBm, -55 to +85 deg C
Parameter
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
IP3 (Input)
IP2 (Input)
1 dB Gain Compression (Input)
Local Oscillator Drive Level
Min.
35
20
13
30
5
10
Typ.
1.0 - 2.0
DC - 1
10
10
40
25
18
40
10
13
Max.
12
12
20
Units
GHz
GHz
dB
dB
dB
dB
dBm
dBm
dBm
dBm
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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MICROWAVE CORPORATION
HMC140 DOUBLE-BALANCED MIXER 1.0 - 2.0 GHz
SEPTEMBER 1999
Conversion Loss
0
Isolation
0
-10
-5 RF/ IF
-20
-10
LO/ IF
-30
4-15 -40 LO/ RF
-20
0
0.5 1 1.5 2
FREQUENCY (GHz)
2.5
3
-50
0
0.5 1 1.5 2
FREQUENCY (GHz)
2.5 3
Return Loss
0
-5
IF
-10
RF
-15
LO
-20
0 0.5 1 1.5 2 2.5 3
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Web Site: www.hittite.com
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MICROWAVE CORPORATION
HMC140 DOUBLE-BALANCED MIXER 1.0 - 2.0 GHz
SEPTEMBER 1999
Schematic
RF
(PIN 7)
LO
(PIN 2)
Absolute Maximum Ratings
LO Drive
Storage Temperature
Operating Temperature
+27 dBm
-65 to +150 deg C
-55 to +125 deg C
IF
(PIN 5)
4
Outline Drawing
0.127
(0.005)
LO
1.041
(0.041)
1.168
(0.046)
0.584
(0.023)
1.168
(0.046)
1.041
(0.041)
0.584
(0.023)
IF
Hittite
3601
RF
N/C
IF(ALTERNATE)
0.432
(0.017)
0.584
(0.023)
0.737
(0.029)
0.127
(0.005)
0.584
(0.023)
IF(ALTERNATE)
DIE THICKNESS IS 0.180 (0.007) BACKSIDE IS GROUND
BOND PADS ARE 0.100 (0.004) SQUARE
ALL DIMENSION IN MILLIMETERS (INCHES(
ALL TOLERANCES ARE ± 0.025 (±0.001)
BOND PAD METALLIZATION : GOLD
BACKSIDE METALLIZATION: NONE
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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MICROWAVE CORPORATION
HMC140 DOUBLE-BALANCED MIXER 1.0 - 2.0 GHz
Handling Precautions
SEPTEMBER 1999
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ).
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent twee-
zers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, twee-
zers, or fingers.
Mounting
4
The chip is not back-metallized and can be die mounted with electrically conductive epoxy only. The
mounting surface should be clean and flat.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22
grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package. RF bonds should be as short as
possible.
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Web Site: www.hittite.com
4 - 17



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