HIT8050-N Datasheet PDF - Renesas

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HIT8050-N
Renesas

Part Number HIT8050-N
Description Silicon NPN Epitaxial
Page 5 Pages


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HIT8050-N
Silicon NPN Epitaxial
Features
Low frequency power amplifier
Complementary pair with HIT8550-N
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
REJ03G1611-0100
Rev.1.00
Nov 28, 2007
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: PW 10 ms, Duty cycle 20%
3
2
1
Symbol
VCBO
VCEO
VEBO
IC
IC (peak) Note
PC
Tj
Tstg
Ratings
45
25
6
0.7
1.0
0.625
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
W
°C
°C
REJ03G1611-0100 Rev.1.00 Nov 28, 2007
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HIT8050-N
Electrical Characteristics
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
(Ta = 25°C)
Symbol Min. Typ Max. Unit
Test Conditions
V(BR)CBO
45
V IC = 10 µA, IE = 0
V(BR)CEO
25
V IC = 1 mA, RBE =
V(BR)EBO
6
— — V IE = 10 µA, IC = 0
ICBO — — 500 nA VCB = 45 V, IE = 0
IEBO — — 500 nA VEB = 6 V
hFE1 45 — — — VCE = 1 V, IC = 5 mA
hFE2 85 — 330 — VCE = 1 V, IC = 100 mA
VCE(sat)
— 0.5
V IC = 500 mA, IB = 50 mA
VBE(on)
— 1.0
V VCE = 3 V, IC = 10 mA
Main Characteristics
Maximum Collector Dissipation Curve
1200
1000
800
600
400
200
0
0 50 100 150
Ambient Temperature Ta (°C)
1000
800
600
400
Typical Output Characteristics
10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
P
C = 625 mW
1 mA
200
IB = 0
0
0 0.4 0.8 1.2 1.6 2.0
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
300
Ta = 75°C
250
25°C
200
-25°C
150
100
50
VCE = 1 V
0
1 10
100 1000
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
100
f = 1 MHz
IE = 0
10
1
0.1
1
10 100
Collector to Base Voltage VCB (V)
REJ03G1611-0100 Rev.1.00 Nov 28, 2007
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HIT8050-N
Typical Transfer Characteristics
100
VCE = 3 V
Ta = 75°C
10
25°C
-25°C
1
0.1
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
Collector to Emitter, Base to Emitter
Saturation Voltage vs. Collector Current
1.2
IC = 10 IB
1.0
VBE(sat)
0.8
0.6
0.4
0.2
0
1
VCE(sat)
10 100 1000
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
400
VCE = 1 V
350
300
250
200
150
100
50
0
1 10 100 1000
Collector Current IC (mA)
REJ03G1611-0100 Rev.1.00 Nov 28, 2007
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HIT8050-N
Package Dimensions
Package Name
TO-92(1)
JEITA Package Code
SC-43A
RENESAS Code
Previous Code MASS[Typ.]
PRSS0003DA-A TO-92(1) / TO-92(1)V
0.25g
4.8 ± 0.3
3.8 ± 0.3
Unit: mm
0.60 Max
0.55 Max
0.5 Max
1.27
2.54
Ordering Information
Part Name
Quantity
Shipping Container
HIT8050-N-EQ
2500 pcs.
Bulk, Vinyl Bag
HIT8050-N-TZ-EQ
2500 pcs.
Hold Box, Radial Taping
Note: This product is designed for consumer use and not for automotive.
REJ03G1611-0100 Rev.1.00 Nov 28, 2007
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