HFS7N60 Datasheet PDF - SemiHow


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HFS7N60
SemiHow

Part Number HFS7N60
Description 600V N-Channel MOSFET
Page 7 Pages

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Dec 2005
HFS7N60
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ = 0.96
ID = 7.0 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 40 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.96 (Typ.) @VGS=10V
‰ 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
7.0*
4.4*
28*
±30
420
7.0
4.8
5.5
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
48
0.38
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
2.6
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
℃/W
◎ SEMIHOW REV.A0,Decy 2005



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Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS Gate Threshold Voltage
RDS(ON) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 3.5 A
2.5
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ΔBVDSS
/ΔTJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 ㎂, Referenced to25℃
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 7.0 A,
RG = 25
(Note 4,5)
VDS = 480V, ID = 7.0 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 7.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
0.96 1.2
V
-- -- V
0.65 -- V/℃
-- 1
-- 10
-- 100
-- -100
970 1260
80 110
17 22
20 40
55 110
90 180
60 120
40 52
6.5 --
16.5 --
nC
nC
nC
-- 7.0
-- 28
-- 1.4
380 --
4.1 --
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=15.7mH, IAS=7.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD7.0A, di/dt300A/μs, VDDBVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Decy 2005



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Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1500
1200
Ciss
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
900
Coss
600
? Note ;
1. V = 0 V
Crss
GS
2. f = 1 MHz
300
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 120V
10 VDS = 300V
VDS = 480V
8
6
4
2
? Note : ID = 7.0A
0
0 4 8 12 16 20 24 28 32 36 40 44
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Decy 2005



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Typical Characteristics (continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
vs Temperature
7
6
5
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
100 D =0.5
1 0 -1
1 0 -2
1 0 -5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
N otes :
1 . Z θ JC( t) = 2 .6 / W M a x .
2. D uty F actor, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
sin g le p u lse
PDM
t1t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D u ra tio n [s e c ]
101
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Decy 2005




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