HBP1037C6 Datasheet PDF - CYStech Electronics


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HBP1037C6
CYStech Electronics

Part Number HBP1037C6
Description General Purpose PNP Epitaxial Planar Transistors
Page 6 Pages

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CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistors
(dual transistors)
HBP1037C6
Spec. No. : C306C6
Issued Date : 2012.09.28
Revised Date :
Page No. : 1/6
Features
Two BTA1037 chips in a SOT-563 package.
Mounting possible with SOT-523 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Excellent hFE linearity
Complementary to HBN2412C6
Equivalent Circuit
HBP1037C6
Outline
C1
SOT-563
B2 E2
Tr1 Tr2
E1 B1 C2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C, each transistor)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Note : *1 120mW per element must not be exceeded
Limits
-100
-65
-6
-150
150(total)
150
-55~+150
*1
Unit
V
V
V
mA
mW
°C
°C
HBP1037C6
CYStek Product Specification
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CYStech Electronics Corp.
Spec. No. : C306C6
Issued Date : 2012.09.28
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C, each transistor)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
VBE
VBE
*hFE
fT
Cob
Min.
-100
-65
-6
-
-
-
-
-
-0.6
-
200
80
-
Typ.
-
-
-
-
-
-
-0.12
-
-
-
-
110
2
Max.
-
-
-
-0.1
-0.1
-0.2
-0.3
-0.4
-0.7
-0.76
450
-
3.5
Unit
V
V
V
μA
μA
V
V
V
V
V
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-80V
VEB=-6V
IC=-10mA, IB=-0.5mA
IC=-50mA, IB=-5mA
IC=-100mA, IB=-5mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-10mA
VCE=-6V, IC=-1mA
VCE=-10V, IC=-1mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
HBP1037C6-0-T1-G
Package
SOT-563
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
HBP1037C6
CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C306C6
Issued Date : 2012.09.28
Revised Date :
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
1000
HFE@VCE=6V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100 100
10
0.1
1 10 100
Collector Current---IC (mA)
1000
10000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=10IB
1000
10
0.1
1 10 100
Collector Current---IC (mA)
1000
Cutoff Frequency vs Collector Current
1000
FT@VCE=12V
100
100
0.1
100
1 10 100
Collector Current---IC(mA)
Capacitance Characteristics
fT=1MHz
10 Cib
1000
Cob
1
0.1 1 10 100
Reverse-biased Voltage---(V)
10
0.1
160
140
120
100
80
60
40
20
0
0
1 10
Collector Current---IC (mA)
Power Derating Curves
100
Dual
Single
50 100 150
Ambient Temperature --- TA(℃ )
200
HBP1037C6
CYStek Product Specification



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Reel Dimension
CYStech Electronics Corp.
Spec. No. : C306C6
Issued Date : 2012.09.28
Revised Date :
Page No. : 4/6
Carrier Tape Dimension
HBP1037C6
CYStek Product Specification




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