HBNP54S6R Datasheet PDF - CYStech Electronics


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HBNP54S6R
CYStech Electronics

Part Number HBNP54S6R
Description General Purpose NPN PNP Epitaxial Planar Transistors(dual transistors)
Page 9 Pages

HBNP54S6R datasheet pdf
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CYStech Electronics Corp.
Spec. No. : C904S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 1/9
General Purpose NPN / PNP Epitaxial Planar Transistors
(dual transistors)
HBNP54S6R
Features
Includes a BTC3906 chip and BTA1514 chip in a SOT-363 package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Pb-free lead plating package.
Equivalent Circuit
HBNP54S6R
Outline
SOT-363
Ordering Information
Device
HBNP54S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBNP54S6R
CYStek Product Specification
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CYStech Electronics Corp.
Spec. No. : C904S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
TR1 (NPN)
TR2 (PNP)
180 -160
160 -160
6 -6
600 -600
200(total) *1
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Note: *1 150mW per element must not be exceeded.
Characteristics (Ta=25°C)
Q1, TR1 (NPN)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
180
160
6
-
-
-
-
-
-
100
120
40
100
-
Typ.
-
-
-
-
-
0.1
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.15
0.2
0.9
1.0
-
270
-
-
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=180V
VEB=6V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
HBNP54S6R
CYStek Product Specification



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Q2, TR2 (PNP)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
-160
-160
-6
-
-
-
-
-
-
90
120
40
100
-
CYStech Electronics Corp.
Spec. No. : C904S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 3/9
Typ. Max. Unit
Test Conditions
- - V IC=-50μA
- - V IC=-1mA
- - V IE=-50μA
- -50 nA VCB=-160V
- -50 nA VEB=-6V
- -0.2 V IC=-10mA, IB=-1mA
- -0.3 V IC=-50mA, IB=-5mA
- -0.9 V IC=-10mA, IB=-1mA
- -1.0 V IC=-50mA, IB=-5mA
- - - VCE=-5V, IC=-1mA
- 270 - VCE=-5V, IC=-10mA
- - - VCE=-5V, IC=-50mA
- - MHz VCE=-30V, IC=-10mA, f=100MHz
- 6 pF VCB=-30V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Recommended Soldering Footprint
HBNP54S6R
CYStek Product Specification



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CYStech Electronics Corp.
Q1, Typical Characteristics
Spec. No. : C904S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 4/9
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
01
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
23 45
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
012
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
34 56
Collector-to-Emitter Voltage---VCE(V)
1000
100
Saturation Voltage vs Collector Current
VCESAT=10IB
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
VCE=5V
10
0.1
1 10
Collector Current---IC (mA)
10000
1000
Saturation Voltage vs Collector Current
VCESAT=50IB
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
10
100 1
10
Collector Current---IC(mA)
10000
1000
On Voltage vs Collector Current
VBEON@VCE=6V
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
100
10
0.1
HBNP54S6R
1 10
Collector Current---IC(mA)
100
100 1
10
Collector Current---IC (mA)
100
CYStek Product Specification




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