HBNP5213G6 Datasheet PDF - CYStech Electronics


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HBNP5213G6
CYStech Electronics

Part Number HBNP5213G6
Description NPN AND PNP Dual Epitaxial Planar Transistors
Page 9 Pages

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CYStech Electronics Corp.
NPN AND PNP Dual Epitaxial Planar Transistors
HBNP5213G6
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 1/9
Features
High BVCEO
High current
Excellent DC current gain characteristics
Pb-free lead plating and halogen-free package
Equivalent Circuit
HBNP5213G6
Outline
TSOP-6
C2
E1
C1
B : Base E : Emitter C : Collector
B2
E2
B1
Ordering Information
Device
HBNP5213G6-0-T1-G
Package
TSOP-6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBNP5213G6
CYStek Product Specification
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CYStech Electronics Corp.
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
(Note 1)
Peak Collector Current
(Note 2)
Peak Base Current
(Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
ICP
IBP
Pd
Tj, Tstg
Rth,ja
Limits
NPN
PNP
100 -100
80 -80
7 -7
1 -1
2 -2
200 -200
1.14
0.01
-55~+150
110
Unit
V
V
V
A
A
mA
W
W / °C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t5 sec; 180°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
NPN Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
100
-
- V IC=50μA
BVCEO
80
-
- V IC=1mA
BVEBO
7
-
- V IE=50μA
ICBO - - 100 nA VCB=100V, IE=0
IEBO - - 100 nA VEB=7V, IC=0
*VCE(SAT)
-
0.15 0.3
V IC=500mA, IB=20mA
*VCE(SAT)
-
- 0.5 V IC=1A, IB=50mA
*VBE(SAT)
-
- 1.2 V IC=1A, IB=50mA
*hFE 1
180
-
390
- VCE=10V, IC=150mA
*hFE 2
60
-
-
- VCE=10V, IC=500mA
fT
150 230
- MHz VCE=10V, IC=50mA, f=100MHz
Cob - 6 15 pF VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
HBNP5213G6
CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 3/9
PNP Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
-100
-
- V IC=-100μA
BVCEO
-80
-
- V IC=-10mA
BVEBO
-7
-
- V IE=-10μA
ICBO - - -100 nA VCB=-100V
IEBO - - -100 nA VEB=-7V
*VCE(sat)1
-
-0.16
-0.3
V IC=-500mA, IB=-50mA
*VCE(sat)2
-
- -0.6 V IC=-700mA, IB=-35mA
*VBE(sat)
-
- -1.2 V IC=-1A, IB=-50mA
*hFE1
180
-
390
- VCE=-10V, IC=-150mA
*hFE2
50
-
-
- VCE=-10V, IC=-500mA
fT
150 200
- MHz VCE=-10V, IC=-50mA, f=100MHz
Cob - 11 15 pF VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Recommended Soldering Footprint
HBNP5213G6
CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 4/9
Q1, NPN Typical Characteristics
Current Gain vs Collector Current
1000
HFE VCE=5V
Saturation Voltage vs Collector Current
1000
VCESAT
100 100
VCE=2V
VCE=1V
10
1
10 100
Collector Current ---IC(mA)
1000
10000
Saturation Voltage vs Collector Current
VBESAT@IC=10IB
10
1
10000
IC=25IB
IC=20IB
IC=10IB
10 100
Collector Current ---IC(mA)
On Voltage vs Collector Current
1000
VBEON@VCE=2V
1000 1000
100
1
10 100 1000
Collector Current--- IC(mA)
10000
Transition Frequency vs Collector Current
1000
VCE=10V
f=1MHz
100
1
10 100 1000
Collector Current--- IC(mA)
Capacitance Characteristics
100
f=1MHz
1000 0
100 10
10
1
10 100
Collector Current---IC (mA)
1000
1
0.1
1 10
Collector Base Voltage-- VCB(V)
100
HBNP5213G6
CYStek Product Specification




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