HBNP45C6 Datasheet PDF - CYStech Electronics


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HBNP45C6
CYStech Electronics

Part Number HBNP45C6
Description General Purpose NPN PNP Epitaxial Planar Transistors(dual transistors)
Page 7 Pages

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CYStech Electronics Corp.
Spec. No. : C901C6
Issued Date : 2012.09.28
Revised Date :
Page No. : 1/7
General Purpose NPN / PNP Epitaxial Planar Transistors
(dual transistors)
HBNP45C6
Features
Includes a BTC2412 chip and a BTA1037 chip in a SOT-563 package.
Mounting possible with SOT-523 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBNP45C6
Outline
C1
SOT-563
B2 E2
E1 B1 C2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
TR1 (NPN)
TR2 (PNP)
60 -60
50 -50
7 -6
150 -150
150(total) *1
150
-55~+150
Note: *1 120mW per element must not be exceeded.
Unit
V
V
V
mA
mW
°C
°C
HBNP45C6
CYStek Product Specification
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CYStech Electronics Corp.
Spec. No. : C901C6
Issued Date : 2012.09.28
Revised Date :
Page No. : 2/7
Characteristics (Ta=25°C)
TR1 (NPN)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
60
50
7
-
-
-
200
80
-
Typ.
-
-
-
-
-
0.2
-
180
2
Max.
-
-
-
0.1
0.1
0.4
600
-
3.5
TR2 (PNP)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
-60
-50
-6
-
-
-
200
60
-
Typ.
-
-
-
-
-
-0.25
-
140
4
Max.
-
-
-
-0.1
-0.1
-0.5
600
-
5
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=50μA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-60V
VEB=-6V
IC=-50mA, IB=-5mA
VCE=-6V, IC=-1mA
VCE=-12V, IC=-2mA, f=100MHz
VCB=-12V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
HBNP45C6-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
HBNP45C6
CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C901C6
Issued Date : 2012.09.28
Revised Date :
Page No. : 3/7
Characteristic curves
TR1 (NPN)
Current Gain vs Collector Current
1000
HFE@VCE=6V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
100
0.1
1 10 100
Collector Current --- IC(mA)
1000
Saturation Voltage vs Collector Current
1000
VBE(SAT)@IC=10IB
10
0.1
1 10 100
Collector Current --- IC(mA)
Cutoff Frequency vs Collector Current
1000
1000
100 FT@VCE=12V
100
0.1
1 10 100
Collector Current --- IC(mA)
1000
Capacitance Characteristics
100
fT=1MHz
10 Cib
1
0.1
HBNP45C6
Cob
1 10
Reverse-biased Voltage---(V)
100
10
0.1
1 10
Collector Current --- IC(mA)
100
CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C901C6
Issued Date : 2012.09.28
Revised Date :
Page No. : 4/7
TR2 (PNP)
Current Gain vs Collector Current
1000
HFE@VCE=6V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100 100
10
0.1
1 10 100
Collector Current---IC (mA)
1000
10000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=10IB
1000
10
0.1
1 10 100
Collector Current---IC (mA)
1000
Cutoff Frequency vs Collector Current
1000
FT@VCE=12V
100
100
0.1
100
1 10 100
Collector Current---IC(mA)
Capacitance Characteristics
fT=1MHz
10 Cib
1000
Cob
1
0.1 1 10 100
Reverse-biased Voltage---(V)
HBNP45C6
10
0.1
160
140
120
100
80
60
40
20
0
0
1 10
Collector Current---IC (mA)
Power Derating Curves
Dual
Single
50 100 150
Ambient Temperature --- TA(℃ )
100
200
CYStek Product Specification




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