HBNP1268Q8 Datasheet PDF - CYStech Electronics


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HBNP1268Q8
CYStech Electronics

Part Number HBNP1268Q8
Description General Purpose NPN PNP Epitaxial Planar Transistors(quadruple transistors)
Page 8 Pages

HBNP1268Q8 datasheet pdf
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CYStech Electronics Corp.
Spec. No. : C198Q8
Issued Date : 2010.11.29
Revised Date :
Page No. : 1/8
General Purpose NPN / PNP Epitaxial Planar Transistors
(quadruple transistors)
HBNP1268Q8 BVCEO
NPN
50V
PNP
-30V
IC 4A -5A
RCE(SAT)(TYP) 125mΩ 180mΩ
Features
Includes two NPN chips and two PNP chips in a SOP-8 package.
Pb-free lead plating package
Equivalent Circuit
HBNP1268Q8
Outline
SOP-8
BBase
EEmitter
CCollector
HBNP1268Q8
CYStek Product Specification
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CYStech Electronics Corp.
Spec. No. : C198Q8
Issued Date : 2010.11.29
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Each transistor, Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
(Note 1)
Total Power Dissipation
Linear Derating Factor
(Note 2)
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient (Note 2)
Symbol
VCBO
VCEO
VEBO
IC
ICM
Pd
Tj ; Tstg
Rth,ja
Limits
NPN
PNP
80 -30
50 -30
6 -5
4 -5
7 -7
1.38
0.01
-55~+150
90
Note : 1. Pulse width300μs, duty cycle2%.
2. Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum copper pad.
Unit
V
A
A
W
W / °C
°C
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
NPN 1 & NPN 2
Symbol
Min. Typ. Max. Unit Test Conditions
BVCBO
80
-
-
V IC=100μA, IE=0
BVCEO
50
-
-
V IC=1mA, IB=0
BVEBO
6
-
-
V IE=50μA, IC=0
ICBO - - 100 nA VCB=80V, IE=0
ICEO - - 1 μA VCE=50V, IB=0
IEBO - - 100 nA VEB=6V, IC=0
*VCE(SAT)
-
- 100 mV IC=400mA, IB=20mA
*VCE(SAT)
-
- 0.25 V IC=1A, IB=10mA
*VCE(SAT) - 0.25 0.5 V IC=2A, IB=100mA
*RCE(SAT)
-
0.125
0.25
Ω IC=2A, IB=100mA
*VBE(SAT)
-
- 1.5 V IC=2A, IB=200mA
*hFE1 250 - - - VCE=2V, IC=100mA
*hFE2 280 - 600 - VCE=2V, IC=500mA
*hFE3 100 - - - VCE=2V, IC=1A
fT - 90 - MHz VCE=5V, IC=0.1A, f=100MHz
Cob - 13 - pF VCB=10V, f=1MHz
HBNP1268Q8
CYStek Product Specification



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PNP 1 & PNP 2
Symbol
ICBO
ICEO
IEBO
*HFE
*VCE(SAT)
*RCE(SAT)
R1
R2
fT
Min.
-
-
-
120
140
100
-
-
-
-
280
7
100
CYStech Electronics Corp.
Spec. No. : C198Q8
Issued Date : 2010.11.29
Revised Date :
Page No. : 3/8
Typ.
-
-
-
-
-
-
-0.25
-0.34
-0.53
-0.18
400
10
-
Max.
-100
-100
-2
-
-
-
-0.4
-0.45
-0.6
-0.2
520
13
-
Unit
nA
nA
mA
-
-
-
V
V
V
Ω
Ω
kΩ
MHz
Test Conditions
VCB=-30V, IE=0A
VCE=-30V, IB=0A
VEB=-5V
VCE=-2V, IC=-100mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-4A
IC=-1A, IB=-5mA
IC=-2A, IB=-20mA
IC=-3A, IB=-30mA
IC=-3A, IB=-30mA
-
-
VCE=-10V, IE=-500mA, f=100MHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
HBNP1268Q8
Package
SOP-8
(Pb-free lead plating package)
Shipping
3000 pcs / Tape & Reel
HBNP1268Q8
CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C198Q8
Issued Date : 2010.11.29
Revised Date :
Page No. : 4/8
Typical Characteristics
NPN 1 & NPN 2
Emitter Grounded Output Characteristics
0.25
IB=500uA
0.2
IB=400uA
0.15 IB=300uA
0.1 IB=200uA
0.05
0
01
IB=100uA
IB=0
234 56
Collector-to-Emitter Voltage---VCE(V)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
IB=2.5mA
IB=2mA
IB=1.5mA
IB=1mA
IB=500uA
IB=0
1 234
56
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
3
IB=10mA
2.5 IB=8mA
2 IB=6mA
IB=4mA
1.5
IB=2mA
1
0.5
0
01
IB=0
23 45
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
VCE=5V
100 VCE=2V
VCE=1V
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
01
Emitter Grounded Output Characteristics
IB=25mA
IB=20mA
IB=15mA
IB=10mA
IB=5mA
IB=0
2 34
56
Collector-to-Emitter Voltage---VCE(V)
10000
Saturation Voltage vs Collector Current
1000
100
VCE(SAT)
IC=100IB
IC=50IB
10
1
10 100 1000
Collector Current---IC (mA)
10000
10
1
IC=20IB
10 100 1000
Collector Current---IC (mA)
10000
HBNP1268Q8
CYStek Product Specification




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