HBN3101S6R Datasheet PDF - CYStech Electronics


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HBN3101S6R
CYStech Electronics

Part Number HBN3101S6R
Description NPN Epitaxial Planar Transistor
Page 6 Pages

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CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
HBN3101S6R
(Dual Transistors)
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 1/6
Features
Two BF422 chips in a SOT-363 package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
High BVCEO, BVCEO300V
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBN3101S6R
Outline
SOT-363
Tr1 Tr2
Ordering Information
Device
HBN3101S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBN3101S6R
CYStek Product Specification
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CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 2/6
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
300
300
5
100
300 (Note 1)
200 (total) (Note 2)
150
-55~+150
Note : 1.Single pulse, Pw=10ms
2.150mW per element must not be exceeded.
Unit
V
V
V
mA
mA
mW
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
300
300
5
-
-
-
-
100
15
60
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
300
900
250
-
-
15
Unit
V
V
V
nA
nA
mV
mV
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
IE=0, VCB=300V
VEB=5V, IC=0
IC=30mA, IB=3mA
IC=30mA, IB=3mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
HBN3101S6R
CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
1000
10000
Saturation Voltage vs Collector Current
100 VCE = 20V
VCE = 10V
VCE = 5V
10
1
10
Collector Current---IC (mA)
100
Saturation Voltage vs Collector Current
1000
VBE(SAT) @ IC =10IB
100
1
10
Collector Current---IC (mA)
100
Recommended Soldering Footprint
1000
VCE(SAT) @ IC = 20IB
100
10
1
VCE(SAT) @ IC = 10IB
10
Collector Current---IC (mA)
250
200
150
100
50
0
0
Power Derating Curves
Dual
Single
50 100 150
Ambient Temperature---TA(℃)
100
200
HBN3101S6R
CYStek Product Specification



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Reel Dimension
CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 4/6
Carrier Tape Dimension
HBN3101S6R
CYStek Product Specification




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