HBN2515S6R Datasheet PDF - CYStech Electronics


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HBN2515S6R
CYStech Electronics

Part Number HBN2515S6R
Description Low Vcesat NPN Epitaxial Planar Transistor
Page 6 Pages

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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
HBN2515S6R
(Dual Transistors)
Spec. No. : C223S6-A
Issued Date : 2007.07.18
Revised Date :2011.02.22
Page No. : 1/6
Features
Two BTD2515 chips in a SOT-363 package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Low VCE(sat), VCE(sat)=25mV (max), at IC / IB = 10mA / 0.5mA.
Weight : 9.1mg, approximately.
Pb-free package.
Equivalent Circuit
HBN2515S6R
Outline
SOT-363
Tr1 Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
20
15
6
800
1.5 (Note 1)
200 (total) (Note 2)
150
-55~+150
Unit
V
V
V
mA
A
mW
°C
°C
Note : 1.Single pulse, Pw=10ms
2.150mW per element must not be exceeded.
HBN2515S6R
CYStek Product Specification
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CYStech Electronics Corp.
Spec. No. : C223S6-A
Issued Date : 2007.07.18
Revised Date :2011.02.22
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*RCE(sat)
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
20
15
6
-
-
-
-
-
-
-
-
160
180
150
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
6.5
Max.
-
-
-
100
100
25
150
250
500
1.1
0.9
-
560
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
mΩ
V
V
-
-
-
MHz
pF
Test Conditions
IC=100μA, IE=0
IC=2mA, IB=0
IE=100μA, IC=0
VCB=15V, IE=0
VEB=6V, IC=0
IC=10mA, IB=0.5mA
IC=200mA, IB=10mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=2V, IC=100mA
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
HBN2515S6R
Package
SOT-363
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
BS
HBN2515S6R
CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C223S6-A
Issued Date : 2007.07.18
Revised Date :2011.02.22
Page No. : 3/6
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage vs Collector Current
1000
VCE=2V
100
10
1
VCE=1V
10 100
Collector Current---IC (mA)
1000
100
10
1
VCESAT@IC= 20 IB
VCESAT@IC=10IB
10 100
Collector Current---IC(mA)
1000
10000
1000
Saturation Voltage vs Collector Current
VBESAT@IC= 10 IB
On Voltage vs Collector Current
1000
VBEON@VCE=2V
100
1
250
200
150
100
50
0
0
10 100
Collector Current---IC (mA)
Power Derating Curve
1000
Dual
Single
50 100 150
Ambient Temeprature---TA(℃)
200
100
1
10 100
Collector Current---IC(mA)
1000
HBN2515S6R
CYStek Product Specification



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Reel Dimension
CYStech Electronics Corp.
Spec. No. : C223S6-A
Issued Date : 2007.07.18
Revised Date :2011.02.22
Page No. : 4/6
Carrier Tape Dimension
HBN2515S6R
CYStek Product Specification




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