HBCA143TC6 Datasheet PDF - CYStech Electronics


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HBCA143TC6
CYStech Electronics

Part Number HBCA143TC6
Description PNP and NPN Dual Digital Transistors
Page 7 Pages

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CYStech Electronics Corp.
PNP and NPN Dual Digital Transistors
HBCA143TC6
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 1/7
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
One DTA143T chip and one DTC143T chip in a SOT-563 package.
Mounting by SOT-523 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Pb-free and halogen-free package.
Equivalent Circuit
HBCA143TC6
RB2
TR1
RB1
TR2
Outline
C1
SOT-563
B2 E2
RB1=4.7kΩ , RB2=4.7 kΩ
E1 B1 C2
Ordering Information
Device
HBCA143TC6
Package
SOT-563
(Pb-free and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Marking
16
HBCA143TC6
CYStek Product Specification
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Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 2/7
Absolute Maximum Ratings (Ta=25)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note : 120mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
50 -50
50 -50
5 -5
100 -100
150 (Note)
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Characteristics (Ta=25)
•Tr1(NPN)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
VCBO
50
-
-
V IC=50μA
Collector-Emitter Breakdown Voltage VCEO 50 - - V IC=1mA
Emitter-Base Breakdown Voltage
VEBO 5 - - V IE=50μA
Collector-Base Cutoff Current
ICBO - - 0.5 μA VCB=50V
Emitter-Base Cutoff Current
IEBO - - 0.5 μA VEB=4V
Collector-Emitter Saturation Voltage VCE(sat) -
- 0.3 V IC=5mA, IB=0.25mA
DC Current Gain
hFE 100 - 600 - VCE=5V, IC=1mA
Input Resistance
R 3.29 4.7 6.11 kΩ -
Transition Frequency
fT - 250 - MHz VCE=10V, IE=5mA, f=100MHz*
* Transition frequency of the device
•Tr2(PNP)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
BVCBO -50 -
- V IC=-50μA
BVCEO -50 -
- V IC=-1mA
BVEBO -5 -
- V IE=-50μA
ICBO - - -0.5 μA VCB=-50V
IEBO - - -0.5 μA VEB=-4V
VCE(sat) - 0.1 -0.3 V IC=-5mA, IB=-0.25mA
hFE 100 - 600 - VCE=-5V, IC=-1mA
R 3.29 4.7 6.11 kΩ -
fT - 250 - MHz VCE=-10V, IC=-5mA,f=100MHz *
* Transition frequency of the device
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Typical Characteristics
•Tr1(NPN)
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 3/7
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000 1000
100
HFE@VCE=5V
10
0.1
1 10
Collector Current --IC(mA)
100
•Tr2(PNP)
Current Gain vs Collector Current
1000
VCE=5V
100
10
1
VCESAT@IC=20IB
10
Collector Current --- IC(mA)
100
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=20IB
100
100
0.1
1 10
Collector Current---IC (mA)
100
10
0.1
1 10
Collector Current---IC (mA)
100
HBCA143TC6
CYStek Product Specification



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Typical Characteristics(Cont.)
Power Derating Curves
160
140
120
100
80
60
40
20
0
0
Dual
Single
50 100 150
Ambient Temperature --- TA(℃ )
200
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 4/7
Moisture Sensitivity Level : conform to JEDEC level 1
Recommended Storage Condition:
Temperature : 30 °C
Humidity : 60% RH
HBCA143TC6
CYStek Product Specification




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