HBCA123JS6R Datasheet PDF - CYStech Electronics


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HBCA123JS6R
CYStech Electronics

Part Number HBCA123JS6R
Description PNP and NPN Dual Digital Transistors
Page 8 Pages

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CYStech Electronics Corp.
PNP and NPN Dual Digital Transistors
HBCA123JS6R
Spec. No. : C156S6R
Issued Date : 2013.08.23
Revised Date : 2013.09.04
Page No. : 1/8
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
One DTA123J chip and one DTC123J chip in a SOT-363 package.
Mounting by SOT-323 automatic mounting machines is possible.
Mounting cost and area can be cut in half.
Transistor elements are independent, eliminating interference.
Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBCA123JS6R
RBE2
RB2
TR1
RBE1
RB1
TR2
RB1=2.2kΩ , RB2=2.2kΩ
RBE1=47kΩ , RBE2=47kΩ
Outline
SOT-363R
Ordering Information
Device
HBCA123JS6R
Package
Shipping Marking
SOT-363
3000 pcs / Tape &
(Pb-free lead plating and halogen-free package)
Reel
35
HBCA123JS6R
CYStek Product Specification
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CYStech Electronics Corp.
Spec. No. : C156S6R
Issued Date : 2013.08.23
Revised Date : 2013.09.04
Page No. : 2/8
Absolute Maximum Ratings (Ta=25)
Parameter
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note : 120mW per element must not be exceeded.
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
50 -50
-5~+12
-12~+5
100 -100
100 -100
150 (Note)
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Limit
833
357
Unit
°C/W
°C/W
Characteristics (Ta=25)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- 0.5 V VCC=5V, IO=100μA
VI(on) 1.1
-
- V VO=0.3V, IO=5mA
VO(on)
-
- 0.3 V IO/II=5mA/0.25mA
II - - 3.6 mA VI=5V
IO(off)
-
- 0.5 μA VCC=50V, VI=0V
GI 80 -
- - VO=5V, IO=10mA
R1 1.54 2.2 2.86 kΩ -
R2/R1 17 21 26 - -
fT - 250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
HBCA123JS6R
CYStek Product Specification



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•Tr2(PNP)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
CYStech Electronics Corp.
Spec. No. : C156S6R
Issued Date : 2013.08.23
Revised Date : 2013.09.04
Page No. : 3/8
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- -0.5 V VCC=-5V, IO=-100μA
VI(on) -1.1
-
- V VO=-0.3V, IO=-5mA
VO(on)
-
- -0.3 V IO/II=-5mA/-0.25mA
II - - -3.6 mA VI=-5V
IO(off)
-
- -0.5 μA VCC=-50V, VI=0V
GI 80 -
- - VO=-5V, IO=-10mA
R1 1.54 2.2 2.86 kΩ -
R2/R1 17 21 26 - -
fT - 250 - MHz VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
Recommended Soldering Footprint
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CYStek Product Specification



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CYStech Electronics Corp.
Spec. No. : C156S6R
Issued Date : 2013.08.23
Revised Date : 2013.09.04
Page No. : 4/8
Typical Characteristics
•Tr1(NPN)
1000
DC Current Gain vs Output Current
1000
Output Voltage vs Output Current
100
Vo=5V
100
10
Io/Ii=20
1
0.1
1 10
Output Current ---Io(mA)
100
Input Voltage vs Output Current (ON Characteristics)
10
Vo=0.3V
1
10
0.1
1 10
Output Current ---Io(mA)
100
Output Current vs Input Voltage (OFF Characteristics)
10
Vcc=5V
1
0.1
0.1
0.1
1 10
Output Current --- Io(mA)
0.01
100 0
0.5 1
Input Voltage --- Vi(off)(V )
1.5
HBCA123JS6R
CYStek Product Specification




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