GM3055 Datasheet PDF - GTM CORPORATION


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GM3055
GTM CORPORATION

Part Number GM3055
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 6 Pages

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GM3055 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Description
The SOT-89 package is universally preferred for all commercial industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Package Dimensions
SOT-89
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Operating Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Drain - Source Voltage
VDS
Gate - Source Voltage
VGS
Continuous Drain Current ,VGS@10V
ID@TC=25
Continuous Drain Current ,VGS@10V
Pulsed Drain Current1
ID@TC=100
IDM
Total Power Dissipation
PD@TC=25
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5 TYP.
0.70 REF.
Ratings
-55 ~+150
-55 ~ +150
30
±20
15
9
50
15
Unit
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-case
Rthj-amb
parameter
Thermal Resistance junction-case
Thermal Resistance junction-ambient
Max.
Max.
Value
3
42
Unit
/W
/W
Source –Drain Diode
Symbol
Parameter
Is Continuous source Current (Body Diode)
ISM Pulsed Source Current(Body Diode)1
VsD Forward On Voltage2
Test Conditions
VD=VG=0V, VS=1.3V
Tj=25 ,Is=15A,VGS=0V
Min. Typ. Max. Units
-
- 15
A
-
- 50
A
-
- 1.3
V



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Notes:
1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
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Electrical Characteristics @Tj = 25 (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
BVDss
Drain – Source Breakdown Voltage
VGS=0V, ID=250uA
30
BVDSS/ Tj Breakdown Voltage Temperature Coefficient Reference to 25 , ID=1mA
-
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V,ID=8A
-
VGS=4.5V,ID=6A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
IDSS
Drain-Source Leakage Current(Tj=25 )
VDS=30V,VGS=0V
Drain-Source Leakage Current(Tj=150 )
VDS=24V,VGS=0V
-
-
IGSS Gate-Source Leakage
VGS=±20V
-
Qg Total Gate Charge2
ID=8A
-
Qgs Gate-Source Charge
VDS=24V
-
Qgd Gate-Drain (“Miller)Charge
VGS=5V
-
td(on)
Turn-on Delay Time2
VDS=15V
-
tr Rise Time
ID=8A
-
td(off)
Turn-off Delay Time
RG=3.4 ,VGS=10V
-
tf Fall Time
RD=1.9
-
Ciss
Input Capacitance
VGS=0V
-
Coss
Output Capacitance
VDS=25V
-
Crss
Reverse Transfer Capacitance
f=1.0MHZ
-
Typ.
-
0.037
-
-
-
-
-
-
5.4
1.3
3.6
3.6
19.8
13
3.2
260
144
13
Max.
-
-
80
100
3
25
250
±100
-
-
-
-
-
-
-
-
-
-
Unit
V
V/
m
m
V
uA
uA
nA
nC
nC
nC
nS
nS
nS
nS
pf
pf
pf



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Characteristics Curve
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