GLA2N70 Datasheet PDF - GTM CORPORATION


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GLA2N70
GTM CORPORATION

Part Number GLA2N70
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages

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Pb Free Plating Product
wIwSSwU.EDDaDtaASThEee:2t040U5./c0o9/m14
REVISED DATE :
GLA2N70
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
675V
10
0.2A
Description
The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
SOT-223
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@5V
Continuous Drain Current, VGS@5V
Pulsed Drain Current1
ID @TC=25
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
675
30
0.2
0.13
0.5
1.13
0.01
0.5
1
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Value
110
Unit
/W
GLA2N70
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wIwSSwU.EDDaDtaASThEee:2t040U5./c0o9/m14
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
675
-
2.0
-
-
-
0.52
-
0.4
-
- V VGS=0, ID=1mA
- V/ Reference to 25 , ID=1mA
4.0 V VDS=VGS, ID=250uA
- S VDS=10V, ID=0.2A
100 nA VGS= 30V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 10 uA VDS=675V, VGS=0
- 100 uA VDS=540V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 8.0
- 10.0
5.5 -
1.9 -
0.5 -
7.7 -
3.6 -
24 -
44 -
286 -
25 -
6-
VGS=10V, ID=0.2A
VGS=5V, ID=0.2A
ID=0.2A
nC VDS=540V
VGS=10V
VDD=300V
ID=0.2A
ns VGS=10V
RG=3.3
RD=1500
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
0.2
0.5
Unit Test Conditions
V IS=0.2A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.2V
A
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=1mH, RG=25 , IAS=1A.
3. Pulse width 300us, duty cycle 2%.
GLA2N70
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Characteristics Curve
wIwSSwU.EDDaDtaASThEee:2t040U5./c0o9/m14
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GLA2N70
Fig 6. Type Power Dissipation
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wIwSSwU.EDDaDtaASThEee:2t040U5./c0o9/m14
REVISED DATE :
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GLA2N70
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Page: 4/5




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