GLA27 Datasheet PDF - GTM CORPORATION


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GLA27
GTM CORPORATION

Part Number GLA27
Description NPN TRANSISTOR
Page 2 Pages

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GLA27
NPN TRANSISTOR
Description
The GLA27 is designed for darlington amplifier high current gain collector current to 500mA.
Package Dimensions
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Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Tj
Tstg
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
VCBO
VCES
VEBO
IC
PD
Characteristics at
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
ICES
VCE(sat)
VBE(sat)
hFE1
hFE2
Min.
60
60
10
-
-
-
-
-
10K
10K
Ta = 25
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
1.5
2.0
-
-
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
+150
-55 ~ +150
60
60
10
500
2
Unit
V
V
V
mA
W
Unit
V
V
V
nA
nA
nA
V
V
Test Conditions
IC=100uA , IE=0
IC=100uA, VBE=0
IE=10uA , IC=0
VCB=50V ,IE=0
VEB=10V, IC=0
VCE=50V
IC=100mA, IB=0.1mA
IC=100mA, VCE=5V
VCE=5V, IC=10mA
VCE=5V, IC=100mA



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Characteristics Curve
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Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165




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