FML20N50ES Datasheet PDF - Fuji Electric

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FML20N50ES
Fuji Electric

Part Number FML20N50ES
Description N-CHANNEL SILICON POWER MOSFET
Page 5 Pages


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FML20N50ES
Super FAP-E3 series
http://www.fujisemi.com
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Outline Drawings [mm]
TFP
9.0± 0.2
7.0± 0.2
4
0.4± 0.1
2.0 2.0 2.5
1.5
12
3
1.0±0.2
1.0±0.2
3.6±0.2
Solder
Plating
(4.0) (3.2)
(0.8)
Equivalent circuit schematic
4D
G1
S1 2
3 S2
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
IDP
VGS
IAR
EAS
EAR
dV/dt
-di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Isolation Voltage
PD
Tch
Tstg
VISO
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Characteristics
500
500
±20
±80
±30
20
582.5
9.5
4.6
100
2.16
95
150
-55 to + 150
2
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
kVrms
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
t = 60sec, f = 60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS (th)
IDSS
IGSS
RDS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
QSW
IAV
VSD
trr
Qrr
Conditions
ID=250µA, VGS=0V
ID=250µA, VDS=VGS
VDS=500V, VGS=0V
VDS=400V, VGS=0V
VGS=±30V, VDS=0V
ID=10A, VGS=10V
ID=10A, VDS=25V
VDS=25V
VGS=0V
f=1MHz
Vcc=300V
VGS=10V
ID=10A
RGS=15Ω
Vcc=250V
ID=20A
VGS=10V
L=1.07mH, Tch=25°C
IF=20A, VGS=0V, Tch=25°C
IF=20A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Tch=25°C
Tch=125°C
min.
500
3.7
-
-
-
-
5
-
-
-
-
-
-
-
-
-
-
-
20
-
-
-
typ.
-
4.2
-
-
10
0.27
10
2100
250
15
40
38
85
17
57
21
21
10
-
0.90
0.5
7.0
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Test Conditions
Channel to Case
Channel to Ambient
min.
typ.
Note *1 : Tch≤150°C.
Note *2 : Stating Tch=25°C, IAS=8A, L=16.7mH, Vcc=50V, RG=50Ω.
EAS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : IF≤-ID, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=4.6kV/μs, Vcc≤BVDSS, Tch≤150°C.
max.
-
4.7
25
250
100
0.31
-
3150
375
22.5
60
57
127.5
25.5
85.5
31.5
31.5
15
-
1.35
-
-
max.
1.320
58.0
Unit
V
V
µA
nA
S
pF
ns
nC
A
V
µs
µC
Unit
°C/W
°C/W
1
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FML20N50ES
Allowable Power Dissipation
PD=f(Tc)
400
300
200
100
0
0 25 50 75 100 125
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
50
150
10V
40
30
8.0V
7.5V
20
7.0V
10 6.5V
VGS=6.0V
0
0 4 8 12 16 20 24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0.1
1
ID [A]
10
100
FUJI POWER MOSFET
http://www.fujisemi.com
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
102
101
t=
1µs
10µs
100µs
100 1ms
10-1
Power loss waveform :
Square waveform
PD
t
10-2
10-1
100 101
VDS [V]
102
103
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
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1
0.1
0 2 4 6 8 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
0.8
VGS=6V 6.5V 7V
0.7
8V
12
0.6
0.5 10V 20V
0.4
0.3
0.2
0
2
10 20 30 40
ID [A]
50
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FML20N50ES
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=10A,VGS=10V
1.0
0.8
0.6
0.4 max.
typ.
0.2
0.0
-50
-25
0
25 50 75
Tch [°C]
100 125 150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=20A,Tch=25 °C
14
12
Vcc= 100V
250V
10 400V
8
6
4
2
0
0 20 40 60 80 100
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
100
FUJI POWER MOSFET
http://www.fujisemi.com
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
8
7
6
5
max.
4 typ.
3 min.
2
1
0
-50 -25 0
25 50 75
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100 125 150
104
103
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102
Ciss
Coss
101
Crss
100
10-2
10-1
100
VDS [V]
101
102
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω
103
td(off)
10 102
tf
td(on)
tr
1 101
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75
VSD [V]
3
100
10-1
100
ID [A]
101
102
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FML20N50ES
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=20A
700
600 IAS=8A
500
400 IAS=12A
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
FUJI POWER MOSFET
http://www.fujisemi.com
100
10-1
300
IAS=20A
10-2
200
100
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
0
0 25 50 75 100 125 150
starting Tch [°C]
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4
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Fuji Electric
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