FLL21E010MK Datasheet PDF - Eudyna Devices

www.Datasheet-PDF.com

FLL21E010MK
Eudyna Devices

Part Number FLL21E010MK
Description High Voltage - High Power GaAs FET
Page 6 Pages


FLL21E010MK datasheet pdf
Download PDF
FLL21E010MK pdf
View PDF for Mobile

No Preview Available !

FLL21E010MK
FEATURES
High Voltage Operation : VDS=28V
High Power : P1dB=40dBm(typ.) at f=2.17GHz
High Gain: G1dB=14dB(typ.) at f=2.17GHz
Broad Frequency Range : 2100 to 2200MHz
Proven Reliability
High Voltage - High Power GaAs FET
DESCRIPTION
The FLL21E010MK is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated amplification. This product is
ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers
while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS     Tc=25oC
Total Power Dissipation
Pt
Storage Temperature
Tstg
Channel Temperature
Tch
Rating
32
-3
41.5
-65 to +175
200
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)
Item
Symbol
Condition www.DataSheet.co.kr
Limit
Unit
DC Input Voltage
VDS
Forward Gate Current IGF RG=50
Reverse Gate Current
IGR RG=50
Channel Temperature
Tch
<28
<47
>-2.5
155
V
mA
mA
oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Efficiency
Thermal Resistance
Vp
VGSO
P1dB
G1dB
ηd
Rth
VDS=5V IDS=1.5mA
IGS=-15µA
VDS=28V f=2.17GHz
IDS(DC)=125mA
Channel to Case
min.
-0.1
-5
39.0
13.0
-
-
Limit
Typ.
-0.2
-
40.0
14.0
40
3.1
Max.
-0.5
-
-
-
-
3.6
Unit
V
V
dBm
dB
%
oC /W
G.C.P.:Gain Compression Point
Edition 1.3
Mar 2004
1
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

FLL21E010MK
High Voltage - High Power GaAs FET
Output Power & Drain Efficiency vs. Input Power
@VDS=28V IDS=125mA f=2.17GHz
41 80
40
39 70
38
37 60
36
35 50
34
33 40
32
31 30
30
29 20
28
27 10
26
25 0
10 12 14 16 18 20 22 24 26 28 30
Input Pow er [dBm ]
Pout
Drain Efficiency
www.DataSheet.co.kr
Two-Carrier IMD(ACLR) & Drain Efficiency vs. Output Power
@VDS=28V IDS=125mA fo=2.1325GHz f1=2.1475GHz
W-CDMA 3-GPP BS-1 64ch Modulation
Single-Carrier ACLR & Drain Efficiency vs. Output Power
@VDS=28V IDS=125mA f=2.1325GHz
W-CDMA 3GPP BS-1 64ch Modulation
-25 40.0
-30 35.0
-35 30.0
-40 25.0
-45 20.0
-50 15.0
-55 10.0
-60 5.0
24 26 28 30 32 34 36
Output Pow er [dBm ]
IM3 IM5 Drain Efficiency
-25 40.0
-30 35.0
-35 30.0
-40 25.0
-45 20.0
-50 15.0
-55 10.0
-60 5.0
24 26 28 30 32 34 36
Output Pow er [dBm ]
+/-5M Hz
+/-10M Hz
Drain Efficiency
2
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

FLL21E010MK
High Voltage - High Power GaAs FET
S-Parameters @VDS=28V IDS=300mA f=0.5 to 5.0 GHz
+25j
+10j4.0
3.0
02.0
1.0
0.5G H z
4.0
3.0
2.0
-10j
5.0
1.0
-25j
±180° 8 6
Scale for |S21|
+50j
5.0
+100j
+250j
0.5G H z
100Ω
50Ω -250j
25Ω
10Ω
-50j
-100j
S 11
S 22
+90°
0.5G H z
2.0
5 43
1.0
0.3
0.4
-90°
S 12
S 21
!freq(GHz)S11(mag) S11(ang) S21(mag) S21(ang) S12(mag) S12(ang) S22(mag) S22(ang)
0.1 0.958 -120.1 38.897 110.3 0.005 17.9 0.226 -81.4
0.2 0.948 -148.0 20.943 88.1 0.005 -1.4 0.291 -101.0
0.3 0.945 -158.9 13.801 74.6 0.005 -11.9 0.375 -111.0
0.4 0.946 -164.3 9.953 64.0 0.004 -12.0 0.459 -119.0
0.5 0.945 -167.8 7.598 55.3 0.004 -7.9 0.531 -125.8
1 0.956 -175.7 2.880 24.4 0.002 29.6 0.756 -150.1
1.1 0.953 -176.5 2.487 19.5 0.002 32.1 0.778 -153.5
1.2 0.955 -177.5 2.153 15.5 0.002 52.9 0.806 -156.5
1.3 0.956 -177.9 1.906 11.7 0.003 50.6 0.826 -159.6
1.4 0.954 -178.8 1.688 7.8 0.003 60.6 0.839 -162.2
1.5 0.956 -179.6 1.526 4.5 0.005 65.7 0.854 -164.2
1.6 0.952 -179.7 1.391 1.3 0.004 61.6 0.869 -166.4
1.7 0.955 179.8 1.255 -1.7 0.004 74.9 0.873 -168.7
1.8 0.955 178.8 1.154 -4.5 0.006 80.3 0.879 -170.1
1.9 0.959 178.3 1.070 -7.3 0.006 73.5 0.889 -172.1
1.95 0.953 178.1 1.023 -9.2 0.007 80.8 0.888 -173.0
2 0.956 177.8 0.984 -9.9 0.007 77.8 0.890 -173.7
2.05 0.960 177.6 0.961 -11.6 0.007 77.2 0.897 -174.2
2.1 0.952 177.4 0.920 -13.1 0.008 71.8 0.902 -175.1
2.11www.DataSheet.co.kr
0.959
177.2
0.920
-13.4 0.007
79.5 0.899 -175.5
2.12 0.960 177.5 0.910 -13.5 0.007 76.2 0.901 -175.5
2.13 0.957 176.9 0.908 -13.9 0.008 74.8 0.906 -175.7
2.14 0.958 177.1 0.902 -13.4 0.011 61.1 0.900 -175.8
2.15 0.955 176.9 0.891 -14.4 0.008 74.9 0.905 -176.0
2.16 0.952 176.7 0.889 -15.2 0.007 74.5 0.904 -176.3
2.17 0.957 176.8 0.878 -14.8 0.007 79.2 0.910 -176.5
2.18 0.959 176.8 0.873 -15.0 0.008 69.0 0.905 -176.6
2.19 0.961 176.7 0.869 -15.2 0.007 72.9 0.906 -176.5
2.2 0.954 176.5 0.855 -15.9 0.007 77.2 0.904 -177.0
2.25 0.956 176.7 0.832 -16.7 0.007 78.7 0.909 -177.4
2.3 0.953 175.9 0.810 -17.5 0.008 74.9 0.909 -178.0
2.35 0.956 175.4 0.784 -19.7 0.009 80.0 0.920 -178.4
2.4 0.958 175.4 0.771 -20.7 0.009 75.0 0.919 -179.3
2.5 0.950 174.6 0.731 -22.7 0.010 75.0 0.920 179.5
2.6 0.951 174.0 0.701 -25.0 0.011 78.1 0.922 178.6
2.7 0.947 173.6 0.673 -27.7 0.012 74.2 0.931 177.0
2.8 0.953 172.5 0.652 -30.1 0.011 75.5 0.924 175.7
2.9 0.944 171.6 0.635 -33.1 0.013 74.0 0.927 174.9
3 0.949 170.8 0.609 -35.5 0.014 70.5 0.930 173.5
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

FLL21E010MK
High Voltage - High Power GaAs FET
BOARD LAYOUT
<INPUT SIDE>
Φ
µ
<OUTPUT SIDE>
www.DataSheet.co.kr
16V/10µF
µ
εr=10.45 t=1.2mm
4
Datasheet pdf - http://www.DataSheet4U.net/



FLL21E010MK datasheet pdf
Download PDF
FLL21E010MK pdf
View PDF for Mobile


Related : Start with FLL21E010M Part Numbers by
FLL21E010MK High Voltage - High Power GaAs FET FLL21E010MK
Eudyna Devices
FLL21E010MK pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact