FGPF45N45T Datasheet PDF - Fairchild Semiconductor


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FGPF45N45T
Fairchild Semiconductor

Part Number FGPF45N45T
Description PDP Trench IGBT
Page 7 Pages

FGPF45N45T datasheet pdf
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FGPF45N45T
450V, 45A PDP Trench IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat) =1.6V @ IC = 45A
• High input impedance
• Fast switching
• RoHS complaint
Applications
• PDP System
December 2007
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new sesries of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
TO-220F
1
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES
VGES
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
* Ic_pluse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
450
±30
180
51.6
20.6
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
2.42
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2007 Fairchild Semiconductor Corporation
FGPF45N45T Rev. A
1
www.fairchildsemi.com
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Package Marking and Ordering Information
Device Marking
Device
FGPF45N45T
FGFP45N45TTU
Package
TO-220F
Packaging
Type
Rail / Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 20A, VGE = 15V
IC = 45A, VGE = 15V
IC = 45A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 200V, IC = 45A,
RG = 10, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 200V, IC = 45A,
RG = 10, VGE = 15V,
Resistive Load, TC = 125oC
VCE = 200V, IC = 45A,
VGE = 15V
450 - - V
- 0.5 - V/oC
- - 100 µA
-
-
±400
nA
3.0 4.3 5.5
- 1.21 1.5
- 1.60 -
- 1.57 -
V
V
V
V
- 2140 -
- 130 -
- 102 -
pF
pF
pF
- 26 - ns
- 100 -
ns
- 170 -
ns
-
220 330
ns
- 22 - ns
- 90 - ns
- 132 -
ns
- 280 -
ns
- 100 -
nC
- 15 - nC
- 46 - nC
FGPF45N45T Rev. A
2
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Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180
TC = 25oC
20V
10V
150 15V
12V
120
90
60 VGE = 8V
30
0
0246
Collector-Emitter Voltage, VCE [V]
Figure 2. Typical Output Characteristics
180
TC = 125oC 20V 15V
150 12V 10V
120
90
VGE = 8V
60
30
0
0246
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
180
Common Emitter
150
VGE = 15V
TC = 25oC
120 TC = 125oC
90
60
30
0
01234
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
1.8
Common Emitter
VGE = 15V
1.6
45A
1.4
30A
1.2
IC = 20A
1.0
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
Figure 4. Transfer Characteristics
180
Common Emitter
VCE = 20V
150 TC = 25oC
TC = 125oC
120
90
60
30
0
0 2 4 6 8 10 12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
4
30A 45A
IC = 20A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
FGPF45N45T Rev. A
3
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Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
4
30A 45A
IC = 20A
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 100V
200V
9
20
6
3
0
0 30 60 90 120
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
500
100
tr
10
1
0
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 45A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
Figure 8. Capacitance Characteristics
10000
1000
Cies
Coes
Cres
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
10
1
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
500
IC MAX (Pulse)
100
10µs
100µs
10
1 IC MAX (Continuous)
1ms
10 ms
Single Nonrepetitive
0.1 Pulse TC = 25oC
DC Operation
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
100
10
0
tf
td(off)
Common Emitter
VCC = 200V, VGE = 15V
IC = 45A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
FGPF45N45T Rev. A
4
www.fairchildsemi.com




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