FGPF4533 Datasheet PDF - Fairchild Semiconductor


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FGPF4533
Fairchild Semiconductor

Part Number FGPF4533
Description PDP IGBT
Page 8 Pages

FGPF4533 datasheet pdf
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FGPF4533
330V, PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
August 2010
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5μsec
* Ic_pluse limited by max Tj
Ratings
330
± 30
200
28.4
11.4
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.4
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGPF4533 Rev. B
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/



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Package Marking and Ordering Information
Device Marking
FGPF4533
Device
FGPF4533TU
Package
TO-220F
Packaging
Type
Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ΔBVCES
ΔTJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250μA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250μA, VCE = VGE
IC = 20A, VGE = 15V
IC = 50A, VGE = 15V,
TC = 25oC
IC = 50A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 200V, IC = 20A
RG = 5Ω, VGE = 15V
Resistive Load, TC = 25oC
VCC = 200V, IC = 20A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 125oC
VCE = 200V, IC = 20A
VGE = 15V
330 - - V
- 0.3 - V/oC
- - 100 μA
-
-
±400
nA
2.4 3.3 4.0
- 1.15 -
- 1.55 1.8
- 1.6 -
V
V
V
V
- 1294 -
- 57 -
- 41 -
pF
pF
pF
- 6-
- 22 -
- 40 -
- 220 -
- 6-
- 24 -
- 42 -
- 277 -
- 44 -
- 6-
- 14 -
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
FGPF4533 Rev. B
2 www.fairchildsemi.com



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Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
TC = 25oC
20V
12V
10V
15V
150
VGE = 8V
100
Figure 2. Typical Output Characteristics
200
TC = 125oC
150
20V
15V
12V
10V
100 VGE = 8V
50 50
0
012345
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
200
Common Emitter
VGE = 15V
150 TC = 25oC
TC = 125oC
6
100
0
012345
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
200
Common Emitter
VCE = 10V
150
TC = 25oC
TC = 125oC
6
100
50 50
0
012345
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
1.7
Common Emitter
1.6 VGE = 15V
1.5 50A
1.4
1.3 30A
1.2
IC = 20A
1.1
1.0
0 20 40 60 80 100 120 140
Collector-EmitterCase Temperature, TC [oC]
0
0 2 4 6 8 10
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
12
20
Common Emitter
TC = 25oC
16
12
8
30A
50A
4
IC = 20A
00 4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
FGPF4533 Rev. B
3 www.fairchildsemi.com



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Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
30A
50A
4
IC = 20A
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
9 VCC = 100V
200V
6
20
3
0
0 15 30
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
100
45
10
1
0
tr
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 8. Capacitance Characteristics
2400
2000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
1600
1200
Cies
800
400
0
0.1
Coes
Cres
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
500
100 10μs
100μs
1ms
10 10 ms
DC
1
Single Nonrepetitive
0.1 Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1 10 100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
tf
100
10
0
td(off)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG [Ω]
50
FGPF4533 Rev. B
4 www.fairchildsemi.com




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