FDD8796 Datasheet PDF - Fairchild Semiconductor

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FDD8796
Fairchild Semiconductor

Part Number FDD8796
Description N-Channel PowerTrench MOSFET
Page 6 Pages


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March 2006
FDD8796/FDU8796
N-Channel PowerTrench® MOSFET
25V, 35A, 5.7m
AD FREE I
General Description
Features
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
„ Max rDS(on) = 5.7mat VGS = 10V, ID = 35A
„ Max rDS(on) = 8.0mat VGS = 4.5V, ID = 35A
„ Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V
„ Low gate resistance
Application
„ Avalanche rated and 100% tested
„ Vcore DC-DC for Desktop Computers and Servers
„ RoHS Compliant
„ VRM for Intermediate Bus Architecture
D
G DS
I-PAK
(TO-251AA)
G
D
S
Short Lead I-PAK
G
S
MOSFET Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package Limited)
ID -Continuous (Die Limited)
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
Ratings
25
±20
35
98
305
91
88
-55 to 175
Units
V
V
A
mJ
W
°C
RθJC
Thermal Resistance, Junction to Case TO_252, TO_251
RθJA
RθJA
Thermal Resistance, Junction to Ambient TO_252, TO_251
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
Package Marking and Ordering Information
1.7
100
52
°C/W
°C/W
°C/W
Device Marking
FDD8796
FDU8796
FDU8796
Device
FDD8796
FDU8796
FDU8796_F071
Package
TO-252AA
TO-251AA
TO-251AA
Reel Size
13’’
N/A (Tube)
N/A (Tube)
Tape Width
12mm
N/A
N/A
Quantity
2500 units
75 units
75 units
©2006 Fairchild Semiconductor Corporation
FDD8796/FDU8796 Rev. B
1
www.fairchildsemi.com



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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250µA, VGS = 0V
ID = 250µA, referenced to
25°C
VDS = 20V
VGS = 0V
VGS = ±20V
TJ = 150°C
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250µA
ID = 250µA, referenced to
25°C
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 35A
VDS = 10V, ID = 35A
TJ = 175°C
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics
VDS = 13V, VGS = 0V,
f = 1MHz
f = 1MHz
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate to Source Gate Charge
Qgd Gate to Drain Charge
Drain-Source Diode Characteristics
VDD =13V, ID = 35A
VGS = 10V, RGS = 20
VGS = 0 to10V
VGS = 0 to 5V
VDD =13V,
ID = 35A,
Ig = 1.0mA
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting TJ = 25°C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V.
VGS = 0V, IS = 35A
VGS = 0V, IS = 15A
IF = 35A, di/dt = 100A/µs
IF = 35A, di/dt = 100A/µs
Min
25
1.2
Typ
7
1.8
-6.7
4.5
6.0
6.9
1960
455
315
1.1
10
24
99
57
37
19
6
6
0.9
0.8
30
23
Max Units
1
250
±100
V
mV/°C
µA
nA
2.5 V
mV/°C
5.7
8.0 m
9.5
2610
605
475
pF
pF
pF
20 ns
39 ns
158 ns
91 ns
52 nC
27 nC
nC
nC
1.25 V
1.0 V
45 ns
35 nC
FDD8796/FDU8796 Rev. B
2 www.fairchildsemi.com



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Typical Characteristics TJ = 25°C unless otherwise noted
70
60
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50 VGS = 4.5V
40
VGS = 3.5V
30
20 VGS = 3V
10
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
4.0
3.5 VGS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.0
2.5
VGS = 3.5V
2.0
1.5 VGS = 4.5V
1.0
0.5
0
VGS = 10V
10 20 30 40 50 60 70
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
1.8
ID = 35A
1.6 VGS = 10V
1.4
1.2
1.0
0.8
0.6
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance vs Junction
Temperature
14
ID =35A
12
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
10
8 TJ = 175oC
6
4 TJ = 25oC
2
2468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to Source
Voltage
70
PULSE DURATION = 80µs
60 DUTY CYCLE = 0.5%MAX
50 TJ = 175oC
40
30
TJ = 25oC
20
10 TJ = -55oC
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0V
10
TJ = 175oC
1
0.1
TJ = -55oC
TJ = 25oC
0.01
1E-3
0.0
0.3 0.6 0.9 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
FDD8796/FDU8796 Rev. B
3 www.fairchildsemi.com



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Typical Characteristics TJ = 25°C unless otherwise noted
10
8
6 VDD = 10V
VDD = 13V
4
VDD = 16V
2
0
0 10 20 30 40
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
4000
Ciss
1000
Coss
Crss
f = 1MHz
VGS = 0V
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance vs Drain to Source Voltage
50
TJ = 25oC
10 TJ = 125oC
TJ = 150oC
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE(ms)
100 300
Figure 9. Unclamped Inductive Switching
Capability
100
80
VGS = 10V
60
40 VGS = 4.5V
20
RθJC = 1.7oC/W
0
25 50 75 100 125 150
TC, CASE TEMPERATURE(oC)
175
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
1000
100
10us
100us
10
LIMITED BY
PACKAGE
1ms
1
OPERATION IN THIS
SINGLE PULSE
10ms
AREA MAY BE
TJ = MAX RATED
DC
LIMITED BY rDS(on)
0.1
1
TC = 25oC
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
10000
1000
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----7---51----5---0---T---C--
100 SINGLE PULSE
50
10-5 10-4 10-3 10-2 10-1 100 101
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
FDD8796/FDU8796 Rev. B
4 www.fairchildsemi.com



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