FDB24AN06LA0 Datasheet PDF - Fairchild Semiconductor

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FDB24AN06LA0
Fairchild Semiconductor

Part Number FDB24AN06LA0
Description N-Channel PowerTrench MOSFET
Page 11 Pages


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January 2004
FDB24AN06LA0 / FDP24AN06LA0
N-Channel PowerTrench® MOSFET
60V, 36A, 24m
Features
• rDS(ON) = 20m(Typ.), VGS = 5V, ID = 36A
• Qg(tot) = 16nC (Typ.), VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 83547
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
GATE
DRAIN
(FLANGE)
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-220AB
FDP SERIES
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 25oC, VGS = 5V)
Continuous (TC = 100oC, VGS = 5V)
Continuous (TA = 25oC, VGS = 5V, RθJA = 43oC/W)
Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Ratings
60
±20
40
36
25
7.8
Figure 4
36
75
0.5
-55 to 175
Units
V
V
A
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
2.0
62
43
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2004 Fairchild Semiconductor Corporation
FDB24AN06LA0 / FDP24AN06LA0 Rev. A



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w w w . DPaact akaSghee Me ta4rUki.ncgo amnd Ordering Information
Device Marking
FDB24AN06LA0
Device
FDB24AN06LA0
Package
TO-263AB
Reel Size
330mm
FDP24AN06LA0
FDP24AN06LA0
TO-220AB
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 40A, VGS = 10V
ID = 36A, VGS = 5V
ID = 36A, VGS = 5V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 30V
ID = 36A
Ig = 1.0mA
Switching Characteristics (VGS = 5V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf
tOFF
Fall Time
Turn-Off Time
VDD = 30V, ID = 36A
VGS = 5V, RGS = 9.1
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 90µH, IAS = 28A.
2: Pulse Width = 100s
ISD = 36A
ISD = 18A
ISD = 36A, dISD/dt = 100A/µs
ISD = 36A, dISD/dt = 100A/µs
Min Typ Max Units
60 - - V
- -1
µA
- - 250
- - ±100 nA
1 - 3V
- 0.016 0.019
- 0.020 0.024
- 0.047 0.056
- 1850 -
pF
- 180 -
pF
- 75 - pF
16 21 nC
- 1.8 2.4 nC
- 6.3 - nC
- 4.5 - nC
- 5.0 - nC
- - 168 ns
- 11 - ns
- 101 -
ns
- 28 - ns
- 49 - ns
- - 116 ns
-
-
1.25
V
- - 1.0 V
- - 34 ns
- - 30 nC
©2004 Fairchild Semiconductor Corporation
FDB24AN06LA0 / FDP24AN06LA0 Rev. A



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www.DataTSyhepeitc4Ua.cloCmharacteristics TC = 25°C unless otherwise noted
1.2 50
1.0
40
VGS = 10V
0.8
30 VGS = 5V
0.6
20
0.4
0.2 10
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
0.01
10-5
SINGLE PULSE
10-4
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
Figure 3. Normalized Maximum Transient Thermal Impedance
101
400
VGS = 10V
100 VGS = 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
30
10-5
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100 101
Figure 4. Peak Current Capability
©2004 Fairchild Semiconductor Corporation
FDB24AN06LA0 / FDP24AN06LA0 Rev. A



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www.DataTSyhepeit4cUa.cloCmharacteristics TC = 25°C unless otherwise noted
1000
100
10µs
100µs
10 1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
10ms
DC
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
0.001
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
45
60
VGS = 10V
45
VGS = 5V
VGS = 3.5V
30
TJ = 175oC
15 TJ = 25oC
TJ = -55oC
0
1
23
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
4
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40
ID = 40A
30
20
ID = 5A
10
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
30
VGS = 3V
15
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 8. Saturation Characteristics
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-80
VGS = 10V, ID = 40A
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2004 Fairchild Semiconductor Corporation
FDB24AN06LA0 / FDP24AN06LA0 Rev. A



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