F9232 Datasheet PDF - Intersil Corporation


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F9232
Intersil Corporation

Part Number F9232
Description IRF9232
Page 7 Pages

F9232 datasheet pdf
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Semiconductor
January 1998
IRF9230, IRF9231,www.DataSheet4U.com
IRF9232, IRF9233
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm,
P-Channel Power MOSFETs
Features
• -5.5A and -6.5A, -150V and -200V
• rDS(ON) = 0.8and 1.2
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9230
TO-204AA
IRF9230
IRF9231
TO-204AA
IRF9231
IRF9232
TO-204AA
IRF9232
IRF9233
TO-204AA
IRF9233
NOTE: When ordering, use the entire part number.
Description
These devices are P-Channel enhancement mode silicon
gate power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly Developmental type TA17512.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
6-1
File Number 2226.1



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IRF9230, IRF9231, IRF9232, IRF9233
www.DataSheet4U.com
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF9230
IRF9231
IRF9232
IRF9233
UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . VDGRVGS
Continuous Drain
TC = 100oC . . .
Current .
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ID
ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-200
-200
-6.5
-4.0
-26
±20
75
0.6
-150
-150
-6.5
-4.0
-26
±20
75
0.6
-200
-200
-5.5
-3.5
-22
±20
75
0.6
-150
-150
-5.5
-3.5
-22
±20
75
0.6
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg
500
-55 to 150
300
260
500
-55 to 150
300
260
500
-55 to 150
300
260
500
-55 to 150
300
260
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
IRF9230, IRF9232
BVDSS ID = -250µA, VGS = 0V, (Figure10)
IRF9231, IRF9233
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF9230, IRF9231
VGS(TH) VGS = VDS, ID = -250µA
IDSS VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V
TC = 125oC
ID(ON)
VDS > ID(ON) x rDS(ON) MAX, VGS = -10V,
(Figure 7)
IRF9232, IRF9233
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF9230, IRF9231
IGSS
rDS(ON)
VGS = ±20V
ID = -3.5A, VGS = -10V, (Figures 8, 9)
IRF9232, IRF9233
Forward Transconductance (Note 2)
gfs VDS > ID(ON) x rDS(ON) MAX, ID = -3.5A,
(Figure 12)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
VDD = 0.5 x Rated BVDSS, ID -6.5A,
RG = 50Ω, VGS = -10V, (Figure 17, 18)
RL = 14.7for VDSS = 200V
RL = 10.9for VDSS = 150V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated
BVDSS, (Figures 14, 19, 20)
Gate Charge is Essentially Independent
of Operating Temperature
MIN TYP MAX UNITS
-200
-150
-2
-
-
-
-
-
-
-
-
-
-4
-25
-250
V
V
V
µA
µA
-6.5 - - A
-5.5 - - A
- - ±100 nA
- 0.5
- 0.8
2.2 3.5
0.8
1.2
-
S
- 30 50 ns
-
50 100
ns
-
50 100
ns
- 40 80 ns
- 31 45 nC
- 18 - nC
- 13 - nC
6-2



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IRF9230, IRF9231, IRF9232, IRF9233
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
CISS
COSS
CRSS
LD
LS
VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11)
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
Measured From the
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
G
LD
LS
S
-
-
-
-
-
Thermal Resistance Junction to Case
Thermal Resistance
Junction to Ambient
RθJC
RθJA
Typical Socket Mount
-
-
www.DataSheet4U.com
TYP MAX UNITS
550 -
pF
170 -
pF
50 -
pF
5.0 -
nH
12.5 -
nH
- 1.67 oC/W
- 60 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
- - -6.5 A
D
- - -26 A
S
Source to Drain Diode Voltage
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TC = 25oC, ISD = -6.5A, VGS = 0V,
(Figure 13)
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs
-
-
-
- -1.5
400 -
2.6 -
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 17.75mH, RG = 25Ω, peak IAS = 6.5A (Figures 15, 16).
V
ns
µC
6-3



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IRF9230, IRF9231, IRF9232, IRF9233
Typical Performance Curves Unless Otherwise Specified
www.DataSheet4U.com
1.2 -10
1.0
0.8
0.6
0.4
0.2
0.0
0
25 50 75 100 125
TA, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-8
-6 IRF9230, IRF9231
-4
IRF9232, IRF9233
-2
0
25 50
75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1 10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-100
IRF9230, 1
IRF9232, 3
-10 IRF9230, 1
IRF9232, 3
OPERATION IN THIS AREA
IS LIMITED BY rDS(ON)
10µs
100µs
1ms
-1
-0.1
-1
10ms
100ms
TC = 25oC
TJ = MAX RATED
IRF9231, 3
DC
IRF9230, 2
-10 -100
VDS, DRAIN TO SOURCE VOLTAGE (V)
-1000
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-15
VGS = -10V
-12
-9
VGS = -9V
VGS = -8V
VGS = -7V
80µs PULSE TEST
VGS = -6V
-6
-3
0
0
VGS = -5V
VGS = -4V
-10 -20 -30 -40
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
-50
6-4




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