F21NM50N Datasheet PDF - STMicroelectronics

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F21NM50N
STMicroelectronics

Part Number F21NM50N
Description STF21NM50N
Page 18 Pages


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STP/F21NM50N - STW21NM50N
STB21NM50N - STB21NM50N-1
N-channel 500V - 0.15- 18A TO-220/FP/D2/I2PAK/TO-247
Second generation MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STB21NM50N
)STB21NM50N-1
t(sSTF21NM50N
cSTP21NM50N
uSTW21NM50N
550V
550V
550V
550V
550V
< 0.19
< 0.19
< 0.19
< 0.19
< 0.19
18A
18A
18A(1)
18A
18A
rod1. Limited by wire bonding
P100% avalanche tested
teLow input capacitance and gate charge
leLow gate input resistance
bsoDescription
- OThe devices are realized with the second
)generation of MDmesh Technology. This
t(srevolutionary Power MOSFET associates a new
cvertical structure to the company's strip layout to
uyield one of the world's lowest on-resistance and
dgate charge. It is therefore suitable for the most
rodemanding high efficiency converters
te PApplications
ObsoleSwitching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
TO-247
Internal schematic diagram
Order codes
Part number
STB21NM50N
STB21NM50N-1
STF21NM50N
STP21NM50N
STW21NM50N
Marking
B21NM50N
B21NM50N
F21NM50N
P21NM50N
W21NM50N
Package
D2PAK
I2PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
January 2007
Rev 6
1/18
www.st.com
18

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STMicroelectronics
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