F21NM50N Datasheet PDF - STMicroelectronics

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F21NM50N
STMicroelectronics

Part Number F21NM50N
Description STF21NM50N
Page 18 Pages


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STP/F21NM50N - STW21NM50N
STB21NM50N - STB21NM50N-1
N-channel 500V - 0.15- 18A TO-220/FP/D2/I2PAK/TO-247
Second generation MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STB21NM50N
)STB21NM50N-1
t(sSTF21NM50N
cSTP21NM50N
uSTW21NM50N
550V
550V
550V
550V
550V
< 0.19
< 0.19
< 0.19
< 0.19
< 0.19
18A
18A
18A(1)
18A
18A
rod1. Limited by wire bonding
P100% avalanche tested
teLow input capacitance and gate charge
leLow gate input resistance
bsoDescription
- OThe devices are realized with the second
)generation of MDmesh Technology. This
t(srevolutionary Power MOSFET associates a new
cvertical structure to the company's strip layout to
uyield one of the world's lowest on-resistance and
dgate charge. It is therefore suitable for the most
rodemanding high efficiency converters
te PApplications
ObsoleSwitching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
TO-247
Internal schematic diagram
Order codes
Part number
STB21NM50N
STB21NM50N-1
STF21NM50N
STP21NM50N
STW21NM50N
Marking
B21NM50N
B21NM50N
F21NM50N
P21NM50N
W21NM50N
Package
D2PAK
I2PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
January 2007
Rev 6
1/18
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Contents
Contents
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
)4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
ct(s5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Obsolete Product(s) - Obsolete Produ6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18



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STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
TO-220/ D2PAK/
I2PAK/TO-247
TO-220FP
Unit
VDS Drain-source voltage (VGS = 0)
500 V
VGS Gate- source voltage
±25 V
ID
t(s)ID
cIDM (2)
uPTOT
Proddv/dt(3)
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
teInsulation withstand voltage (RMS) from
leViso all three leads to external heat sink
o(t=1s;TC=25°C)
bsTstg Storage temperature
OTj Max. operating junction temperature
-1. Limited only by maximum temperature allowed
t(s)2. Pulse width limited by safe operating area
c3. ISD 18 A, di/dt 400 A/µs, VDD =80% V(BR)DSS
18
11
72
140
1.12
15
--
18(1)
11(1)
72(1)
30
0.23
2500
–55 to 150
150
A
A
A
W
W/°C
V/ns
V
°C
roduTable 2. Thermal data
PSymbol
Parameter
leteRthj-case Thermal resistance junction-case max
o Rthj-amb Thermal resistance junction-ambient max
Obs Tl
Maximum lead temperature for soldering
purpose
TO-220/D²PAK/
I²PAK / TO-247
TO-220FP
0.89
62.5
4.21
Unit
°C/W
°C/W
300 °C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25°C, ID = IAR, VDD = 50V)
Max value
9
480
Unit
A
mJ
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Electrical characteristics
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Value
Unit
Min. Typ. Max.
Drain-source
V(BR)DSS breakdown voltage
ID = 1mA, VGS = 0
500
V
t(s)dv/dt(1)
Drain source voltage slope
VDD=400V, ID=25A,
VGS=10V
44 V/ns
ucIDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating,TC@125°C
1 µA
10 µA
rodIGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
100 nA
PVGS(th) Gate threshold voltage
VDS = VGS, ID = 250µA
2 3 4V
leteRDS(on
Static drain-source on
resistance
VGS = 10V, ID = 9A
0.150 0.190
so1. Characteristic value at turn off on inductive load
- ObTable 5. Dynamic
t(s)Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
cgfs (1)
duCiss
roCoss
PCrss
Forward transconductance VDS = 15V, ID = 9A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
12
1950
420
60
S
pF
pF
pF
leteCoss
(2)
eq.
Equivalent output
capacitance
VGS = 0V, VDS = 0V to 400V
270
pF
so td(on)
b tr
O td(off)
Turn-on delay time
Rise time
Turn-off delay time
VDD =250V, ID = 9A
RG = 4.7VGS = 10V
(see Figure 15.)
22 ns
18 ns
90 ns
tf Fall time
30 ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 400V, ID = 18A,
VGS = 10V,
(see Figure 16.)
65 nC
10 nC
30 nC
f=1MHz Gate DC Bias=0
Rg Gate input resistance
test signal level=20mV
open drain
1.6
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18



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