ET-20N50 Datasheet PDF - ESTEK

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ET-20N50
ESTEK

Part Number ET-20N50
Description N-Channel MOSFET
Page 2 Pages

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Features
RDS(on) (Max 0.26 )@VGS=10V
Gate Charge (Typical 90nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
ET-20N50
N-Channel MOSFET
Symbol
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
General Description
This Power MOSFET is manufactured advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
TO-247
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
20
13
80
±30
1110
25.0
4.5
250
2.00
- 55 ~ 150
300
Value
Typ.
-
0.24
-
Max.
0.50
-
40
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1 BEIJING ESTEK ELECTRONICS CO.,LTD

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Related : Start with ET-20N5 Part Numbers by
ET-20N50 N-Channel MOSFET ET-20N50
ESTEK
ET-20N50 pdf

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