ESD5Z12T1G Datasheet PDF - ON Semiconductor


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ESD5Z12T1G
ON Semiconductor

Part Number ESD5Z12T1G
Description Transient Voltage Suppressors
Page 5 Pages

ESD5Z12T1G datasheet pdf
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ESD5Z2.5T1G Series,
SZESD5Z2.5T1G Series
Transient Voltage
Suppressors
MicroPackaged Diodes for ESD Protection
The ESD5Z Series is designed to protect voltage sensitive
components from ESD and transient voltage events. Excellent
clamping capability, low leakage, and fast response time, make these
parts ideal for ESD protection on designs where board space is at a
premium. Because of its small size, it is suited for use in cellular
phones, portable devices, digital cameras, power supplies and many
other portable applications.
Specification Features:
Low Clamping Voltage
Small Body Outline Dimensions:
0.047x 0.032(1.20 mm x 0.80 mm)
Low Body Height: 0.028(0.7 mm)
Standoff Voltage: 2.5 V 12 V
Peak Power up to 240 Watts @ 8 x 20 ms Pulse
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC6100042 Level 4 ESD Protection
IEC6100044 Level 4 EFT Protection
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree and are RoHS Compliant*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
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SOD523
CASE 502
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
XX
1 G2
XX = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
ESD5ZxxxT1G
SOD523
PbFree
3,000 /
Tape & Reel
SZESD5ZxxxT1G
SOD523
PbFree
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 3 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
January, 2014 Rev. 12
1
Publication Order Number:
ESD5Z2.5T1/D



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ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IEC 6100042 (ESD)
Contact
Air
kV
±30
±30
IEC 6100044 (EFT)
40 A
ESD Voltage
Per Human Body Model
Per Machine Model
kV
16 V
400
Total Power Dissipation on FR4 Board (Note 1) @ TA = 25°C
°PD° 500 mW
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
°C
Lead Solder Temperature Maximum (10 Second Duration)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR4 printed circuit board, singlesided copper, mounting pad 1 cm2.
See Application Note AND8308/D for further description of survivability specs.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
IF Forward Current
VF Forward Voltage @ IF
Ppk Peak Power Dissipation
C Max. Capacitance @VR = 0 and f = 1 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
UniDirectional TVS
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ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device*
ESD5Z2.5T1G
ESD5Z3.3T1G
ESD5Z5.0T1G
VRWM IR (mA)
(V) @ VRWM
VBR (V)
@ IT
(Note 2)
IT
VC (V)
@ IPP =
5.0 A
Device
Marking
ZD
ZE
ZF
Max
2.5
3.3
5.0
Max
6.0
0.05
0.05
Min mA
4.0 1.0
5.0 1.0
6.2 1.0
Typ
6.5
8.4
11.6
VMCax(VI)PP@
Max
10.9
14.1
18.6
(IAP)P
(PWp)k
C
(pF)
VC
Per
IEC6100042
Max Max Typ
(Note 3)
11.0 120 145 Figures 1 and 2
11.2 158 105
See Below
(Note 4)
9.4 174 80
ESD5Z6.0T1G
ZG 6.0 0.01
6.8 1.0 12.4
20.5 8.8 181 70
ESD5Z7.0T1G
ZH 7.0 0.01
7.5 1.0 13.5
22.7 8.8 200 65
ESD5Z12T1G
ZM 12 0.01 14.1 1.0 17
25 9.6 240 55
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
* Include SZ-prefix devices where applicable.
†Surge current waveform per Figure 5.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. ESD5Z5.0T1G shown below. Other voltages available upon request.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 6100042
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 6100042
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ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
IEC 6100042 Spec.
Level
Test
Voltage
(kV)
First Peak
Current Current at
(A) 30 ns (A)
1 2 7.5 4
2 4 15 8
3 6 22.5 12
48
30 16
Current at
60 ns (A)
2
4
6
8
IEC6100042 Waveform
Ipeak
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
ESD Gun
TVS
Figure 3. IEC6100042 Spec
Oscilloscope
50 W
Cable
50 W
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC6100042 waveform. Since the
IEC6100042 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
100
90 tr
80
70
60
50
40
30
20
10
00
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
tP
20 40
60
t, TIME (ms)
Figure 5. 8 X 20 ms Pulse Waveform
80
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