EFC3C001NUZ Datasheet PDF - ON Semiconductor

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EFC3C001NUZ
ON Semiconductor

Part Number EFC3C001NUZ
Description Power MOSFET
Page 6 Pages


EFC3C001NUZ datasheet pdf
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EFC3C001NUZ
Power MOSFET
for 1-2 Cells Lithium-ion Battery Protection
20V, 30m, 6A, Dual N-Channel
This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for 1-2 cells lithium-ion battery applications.
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Features
2.5V drive
Common-Drain type
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
VSSS
20V
RSS(on) Max
30m@ 4.5V
34m@ 3.8V
39m@ 3.1V
56m@ 2.5V
IS Max
6A
Applications
1-2 Cells Lithium-ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
PW100s, duty cycle1%
Total Dissipation (Note 2)
Junction Temperature
Storage Temperature
VSSS
VGSS
IS
ISP
PT
Tj
Tstg
20
10
6
60
1.6
150
55 to +150
V
V
A
A
W
C
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Junction to Ambient (Note 2)
RJA
78.1
Note 2 : Surface mounted on ceramic substrate(5000mm2 0.8mm).
Unit
C/W
ELECTRICAL CONNECTION
N-Channel
4
Rg
3
Rg
2
Rg=500
1 : Source1
2 : Gate1
3 : Gate2
1 4 : Source2
MARKING
WLCSP4, 1.26×1.26 /
EFCP1313-4DG-020
wc
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number :
EFC3C001NUZ/D



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EFC3C001NUZ
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Static Source to Source On-State
Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
V(BR)SSS
ISSS
IGSS
VGS(th)
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
td(on)
tr
td(off)
tf
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=8V, VSS=0V
VSS=10V, IS=1mA
IS=2A, VGS=4.5V
IS=2A, VGS=3.8V
IS=2A, VGS=3.1V
IS=2A, VGS=2.5V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 4
Test Circuit 4
Test Circuit 4
VSS=10V, VGS=4.5V, IS=2A Test Circuit 5
20
0.5
17 23
19.5 26
21 28
24.5 35
50
350
42,000
47,000
V
1 A
1 A
1.3 V
30 m
34 m
39 m
56 m
ns
ns
ns
ns
Total Gate Charge
Forward Source to Source Voltage
Qg
VF(S-S)
VSS=10V, VGS=4.5V, IS=6A Test Circuit 6
IS=2A, VGS=0V
Test Circuit 7
15 nC
0.81 1.2 V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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EFC3C001NUZ
Test circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
S2
G2
A
Test Circuit 2
IGSS
S2
G2
G1 VSS
S1
Test Circuit 3
VGS(th)
S2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G1
VGS
S1
A
VSS
A
VGS
G1
S1
Test Circuit 4
RSS(on)
S2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
IS
VGS
G1
V
S1
Test Circuit 5
td(on), tr, td(off), tf
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G1
PG
S2
RL
V
S1 VSS
Test Circuit 6
Qg
S2
G2
IG =1mA
G1
PG
S1
Test Circuit 7
VF(S-S)
S2
G2
IS
VGS=0V G1
V
S1 When FET1 is
measured,+4.5V is added to
VGS of FET2.
A
RL
VSS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
When FET2 is measured, the position of FET1 and FET2 is switched.
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3



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EFC3C001NUZ
6.0 IS -- VSS
5.5 Ta=25C
5.0
4.5
4.0
3.5
3.0 1.3V
2.5
2.0
1.5
1.0 VGS=1.0V
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Source toRSSoSu(rocen)Vo--ltaVgeG, SVSS -- V
80
Ta=25C
70 IS=2A
60
50
40
30
10
VSS=10V
9
8
IS -- VGS
7
6
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0
Gate to SRouSrSce(oVno)lta-g-e,TVaGS -- V
80
2.5
70
60
50
VVGGSS==23..51VV,,IISS==22AA
40
30
VGS=4.5V, IS=2A
20
10
0
02468
Gate
to
Source
IS --
VVoFlt(aSge-S, V) GS
--
V
10
7 VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.2 0.4 0.6 0.8 1.0
Forward
Source
to
Source Voltage,
VGS -- Qg
VF(S-S)
--
V
4.5
VSS=10V
4.0 IS=6A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 2 4 6 8 10 12 14
Total Gate Charge, Qg -- nC
10
1.2
16
20
10
V GS=3.8V, I S=2A
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
100000
7
5
Ambient Temperature, Ta -- C
SW Time -- IS
td(off)
3
2
tf
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0.01
tr
td(on)
2 3 5 7 0.1
2 3 5 7 1.0
VSS=10V
VGS=4.5V
2 3 5 7 10
Source
Current,
SOA
IS
--
A
100
7
5
3
ISP=60A
(PW100s)
2
100s
10
7
IS=6A
1ms
5
3
2
1.0
7
5
3
2
Operation
in
this
area
DC
1001m0ms s
operation
0.1 is limited by RSS(on).
7
5
Ta=25C
3 Single pulse
2 Surface mounted on ceramic substrate
0.01 (5000mm20.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
23
Source to Source Voltage, VSS -- V
5 7 100
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4



EFC3C001NUZ datasheet pdf
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