DZTA42Q Datasheet PDF - Diodes


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DZTA42Q
Diodes

Part Number DZTA42Q
Description 300V NPN HIGH VOLTAGE TRANSISTOR
Page 7 Pages

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Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Features
BVCEO > 300V
IC = 500mA High Collector Current
2W Power Dissipation
Low Saturation Voltage VCE(SAT) < 500mV @ 20mA
Complementary PNP Type: DZTA92
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
DZTA42Q
300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin. Solderable per MIL-STD-202,
Method 208
Weight: 0.112 grams (Approximate)
Applications
Switch-Mode Power Supplies (SMPS)
Video Output Stages
Motor Driver
SOT223
C
B
Top View
E
Device Symbol
Top View
Pin-Out
Ordering Information (Notes 4 and 5)
Product
DZTA42Q-13
Compliance
Automotive
Marking
K3M
Reel Size (inches)
13
Tape Width (mm)
12
Quantity per Reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
((TToopp VViieeww))
YWW
K3M
K3M = Product Type Marking Code
= Manufacturer’s Code Marking
YWW = Date Code Marking
Y = Last Digit of Year (ex: 6 = 2016)
WW = Week Code (01 to 53)
DZTA42Q
Datasheet Number: DS38748 Rev. 1 - 2
1 of 7
www.diodes.com
May 2016
© Diodes Incorporated



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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
IB
Value
300
300
6
500
100
DZTA42Q
Unit
V
V
V
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
2
1
62
125
19.4
-65 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
Notes:
6. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except mounted on minimum recommended pad (MRP) layout.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DZTA42Q
Datasheet Number: DS38748 Rev. 1 - 2
2 of 7
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May 2016
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Thermal Characteristics and Derating Information
DZTA42Q
60 50mm x 50mm 1oz Cu
50 Tamb = 25OC
40
D=0.5
30
20 D=0.2
Single Pulse
10
1000μµ 1m
D=0.05
D=0.1
10m 100m 1 10 100
Pulse Width (s)
1k
Transient Thermal Impedance
160
140
120
100
50mm x 50mm 1oz Cu
Tamb = 25OC
Single pulse
80
60
40
20
1000µμ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
2.0 50mm x 50mm
1oz Cu
1.5
1.0
0.5
0.00 20 40 60 80 100 120 140 160
Temperature (OC)
Derating Curve
VCE, Collector-Emitter Voltage (V)
Safe Operating Area
DZTA42Q
Datasheet Number: DS38748 Rev. 1 - 2
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector-Base Cut-off Current
Emitter-Base Cut-off Current
ON CHARACTERISTICS (Note 10)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
SMALL SIGNAL CHARACTERISTICS
Symbol Min
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
VBE(SAT)
hFE
300
300
6
25
40
40
Transition Frequency
fT 50
Output Capacitance
Cobo
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Typ
Max
0.1
0.1
0.5
0.9
3
DZTA42Q
Unit
Test Condition
V IC = 100µA
V IC = 1mA
V IE = 100µA
µA VCB = 200V
VEB = 6V
V IC = 20mA, IB = 2mA
V IC = 20mA, IB = 2mA
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
MHz
pF
IC = 10mA, VCE = 20V
f = 100MHz
VCB = 20V, f = 1MHz
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.2 250
0.15
IB = 10mA
IB = 8mA
IB = 6mA
200
TA = 150° C
0.1
0.05
IB = 4mA
IB = 2mA
IB = 1mA
150
100
50
TA = 85° C
TA = 25° C
TA = -55° C
VCE = 5V
0
01 23 45
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 1 Typical Collector Current
vs. Collector-Emitter Voltage
0
1 10 100 1,000
IC, COLLECTOR CURRENT (mA)
Figure 2 Typical DC Current Gain vs. Collector Current
DZTA42Q
Datasheet Number: DS38748 Rev. 1 - 2
4 of 7
www.diodes.com
May 2016
© Diodes Incorporated




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