DMTH8012LK3 Datasheet PDF - Diodes

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DMTH8012LK3
Diodes

Part Number DMTH8012LK3
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Green DMTH8012LK3
80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
80V
RDS(ON) max
16mΩ @ VGS = 10V
21mΩ @ VGS = 4.5V
ID max
TC = +25°C
50A
43A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters
TO252
Features
Rated to +175C ideal for high ambient temperature
environments
Low RDS(ON) ensures on state losses are minimized
High Conversion Efficiency
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMTH8012LK3-13
Case
TO252
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H8012L
YYWW
=Manufacturers Marking
H8012L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
DMTH8012LK3
Document number: DS37588 Rev. 3 - 2
1 of 7
www.diodes.com
July 2015
© Diodes Incorporated



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DMTH8012LK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Energy, L = 60mH
TC = +25C
TC = +100C
Symbol
VDSS
VGSS
ID
IS
IDM
EAS
Value
80
±20
50
35
3
80
147
Units
V
V
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.6
47
60
2.5
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
Qrr
Min
80
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
--
-1
- ±100
1.3 3
12.1 16
14.8 21
0.9 1.2
1949
177
10
0.7
15
34
6
4.5
4.9
3.8
16.5
3.5
30.2
34.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
m
V
pF
nC
ns
ns
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = 1mA
VDS = 64V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 6A
VGS = 0V, IS = 25A
VDS = 40V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 40V, ID = 12A
VDD = 40V, VGS = 10V,
ID = 12A, RG = 1.6Ω
IF = 12A, di/dt = 100A/μs
DMTH8012LK3
Document number: DS37588 Rev. 3 - 2
2 of 7
www.diodes.com
July 2015
© Diodes Incorporated



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30.0
25.0
20.0
15.0
10.0
VGS=10.0V
VGS=6.0V
VGS=5.0V
VGS=4.5V
VGS=4.0V
5.0
0.0
0
0.03
VGS=3.5V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
30
VDS= 5.0V
25
DMTH8012LK3
20
15
10
5
0
1
0.03
175
150
125
85
25
-55
234
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.03
0.02
0.02
VGS=4.5V
0.025
0.02
0.01
0.01
VGS=10.0V
0.00
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current
and Gate Voltage
0.015
0.01
2
ID=6A
ID=12A
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
0.03
VGS=10V
0.025
0.02
175
150
125
2.5
2.3
2.1
1.9 VGS=10V, ID=20A
1.7
0.015
85
1.5
1.3
0.01
25
-55
1.1
0.9
0.7
VGS=4.5V, ID=20A
0.005
0.5
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMTH8012LK3
Document number: DS37588 Rev. 3 - 2
3 of 7
www.diodes.com
July 2015
© Diodes Incorporated



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DMTH8012LK3
0.04 3.5
0.03
0.02
VGS=4.5V, ID=20A
0.01
VGS=10V, ID=20A
3
2.5 ID=1mA
2
ID=250µA
1.5
1
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Temperature
30
VGS=0V
25
20
15
0.5
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs Temperature
10000
f=1MHz
1000
100
Ciss
Coss
10
5
0
0
TA=175
TA=150
TA=125
TA=85
TA=25
TA=-55
0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
Crss
10
1
0
5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE( V)
Figure 10. Typical Junction Capacitance
40
10
9
8
7
6
5
4
3
2
1
0
0
VDS=40V, ID=12A
5 10 15 20 25 30 35
Qg (nC)
Figure 11. Gate Charge
1000
100
RDS(ON) Limited
PW=10μs
PW=1μs
10 PW=100μs
PW=1ms
1 PW=10ms
0.1
0.01
TJ(MAX)=175
TC=25
Single Pulse
DUT on infinite heatsink
VGS=10V
PW=100ms
PW=1s
0.1 1 10
VDS, Drain-Source Voltage (V)
Figure 12. SOA, Safe Operation Area
100
DMTH8012LK3
Document number: DS37588 Rev. 3 - 2
4 of 7
www.diodes.com
July 2015
© Diodes Incorporated



DMTH8012LK3 datasheet pdf
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