DMTH6016LPSQ Datasheet PDF - Diodes

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DMTH6016LPSQ
Diodes

Part Number DMTH6016LPSQ
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Green DMTH6016LPSQ
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
BVDSS
60V
RDS(ON)
16mΩ @ VGS = 10V
24mΩ @ VGS = 4.5V
ID
TC = +25°C
37A
29A
Description and Applications
This MOSFET has been designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
Thermally Efficient Package - Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Power Management
DC-DC Converters
Motor Control
PowerDI5060-8
Top View
Bottom View
Mechanical Data
Case: PowerDI5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
D
Pin1
G
S
Internal Schematic
SD
SD
SD
GD
Top View
Pin Configuration
Ordering Information (Note 5)
Notes:
Part Number
DMTH6016LPSQ-13
Case
PowerDI5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PowerDI5060-8
DDDD
H6016LS
YY WW
= Manufacturers Marking
H6016LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
S S SG
PowerDI is a registered trademark of Diodes Incorporated.
DMTH6016LPSQ
Document number: DS38518 Rev. 2 - 2
1 of 7
www.diodes.com
July 2016
© Diodes Incorporated



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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TC = +25°C
TC = +100°C
TA = +25°C
TA = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
DMTH6016LPSQ
Value
60
±20
37
30.3
9.8
6.9
75
31
15.3
11.7
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.6
57
37.5
4
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
1
Typ Max Unit
Test Condition
— — V VGS = 0V, ID = 250µA
1 µA VDS = 48V, VGS = 0V
±100 nA VGS = ±20V, VDS = 0V
2.5 V VDS = VGS, ID = 250µA
12 16 mVGS = 10V, ID = 20A
21 24
VGS = 4.5V, ID = 18A
0.7 1.2
V VGS = 0V, IS = 1A
864
282
27
1.3
8.4
17
3.1
4.3
3.4
5.2
13
7
22
11
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nCVDS = 30V, ID = 10A
ns
VGS = 10V, VDS = 30V,
RG = 6Ω, ID = 10A
ns
nC IF = 10A, di/dt = 100A/µs
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
DMTH6016LPSQ
Document number: DS38518 Rev. 2 - 2
2 of 7
www.diodes.com
July 2016
© Diodes Incorporated



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30.0
25.0
VGS = 4.0V
VGS = 3.5V
30
VDS = 5.0V
25
DMTH6016LPSQ
20.0
15.0
VGS = 4.5V
VGS = 5.0V
VGS = 10V
20
15
10.0
VGS = 3.0V
5.0
VGS = 2.5V
0.0
0
22.00
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
20.00
18.00
VGS = 4.5V
16.00
14.00
12.00
10.00
VGS = 10V
8.00
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
0.025
VGS = 10V
TJ = 175oC
10
5
0
0
50
TJ = 175oC
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
1234
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
45
40 ID = 20A
35
30
25
20
15
10 ID = 18A
5
0
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2
1.8 VGS = 10V, ID = 20A
0.02 1.6
0.015
0.01
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
1.4
1.2
1
0.8
VGS = 4.5V, ID = 18A
TJ = -55oC
0.005
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
PowerDI is a registered trademark of Diodes Incorporated.
DMTH6016LPSQ
Document number: DS38518 Rev. 2 - 2
3 of 7
www.diodes.com
July 2016
© Diodes Incorporated



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0.04
0.035
0.03
0.025
VGS = 4.5V, ID = 18A
0.02
0.015
0.01
0.005
VGS = 10V, ID = 20A
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Temperature
30
VGS = 0V
25
20
15
10
5
0
0
10
TA = 175oC
TA = 150oC
TA = 125oC
TA = 85oC
TA = 25oC
TA = -55oC
0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
8
6 VDS = 30V
ID = 10A
4
2
0 0 2 4 6 8 10 12 14 16 18
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMTH6016LPSQ
3
2.5
2
ID = 1mA
1.5
1 ID = 250µA
0.5
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs Junction
Temperature
10000
1000
f = 1MHz
Ciss
100
10
1
Coss
Crss
0
0
100
10 20 30 40 50
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
RDS(ON)
Limited
60
10
PW = 1s
PW = 100ms
PW = 10ms
1
PW = 1ms
PW = 100µs
0.1
0.01
TJ(Max) = 175
TC = 25
Single Pulse
PW = 10µs
DUT on Infinite Heatsink
VGS = 10V
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
PowerDI is a registered trademark of Diodes Incorporated.
DMTH6016LPSQ
Document number: DS38518 Rev. 2 - 2
4 of 7
www.diodes.com
July 2016
© Diodes Incorporated



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