DMTH6010SK3 Datasheet PDF - Diodes

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DMTH6010SK3
Diodes

Part Number DMTH6010SK3
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Green DMTH6010SK3
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) max
8mΩ @ VGS = 10V
ID max
TC = +25°C
70A
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
Low RDS(ON) Ensures On State Losses Are Minimized
Excellent Qgd x RDS (ON) Product (FOM)
Advanced Technology for DC/DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Power Management Functions
DC-DC Converters
Backlighting
Mechanical Data
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMTH6010SK3-13
Case
TO252
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H6010S
YYWW
=Manufacturers Marking
H6010S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
DMTH6010SK3
Document number: DS37665 Rev. 2 - 2
1 of 7
www.diodes.com
August 2015
© Diodes Incorporated



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DMTH6010SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
60
±20
16.3
13.6
70
49
3
80
20
27.7
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
3.1
47
59
2.5
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
--
-1
- ±100
-4
5.4 8
0.84 1.2
1940
759
85.2
0.55
36.3
7.5
10.5
5.7
10.4
16.3
11.2
35.6
37.9
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
m
V
pF
nC
ns
ns
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = 1mA
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 20A
VGS = 0V, IS = 20A
VDS = 30V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 30V, ID = 20A, VGS = 10V
VDD = 30V, VGS = 10V,
ID = 20A, RG = 3Ω
IF = 20A, di/dt = 100A/μs
DMTH6010SK3
Document number: DS37665 Rev. 2 - 2
2 of 7
www.diodes.com
August 2015
© Diodes Incorporated



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30.0
25.0
20.0
15.0
10.0
VGS = 10.0V
VGS = 8.0V
VGS = 6.0V
VGS = 5.0V
VGS = 4.0V
5.0
0.0
0
0.008
VGS = 3.5V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
30
VDS =5V
25
DMTH6010SK3
20
15
10
5
0
1
0.1
125oC
150oC
175oC
85oC
25oC
-55oC
2345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
6
0.007
0.006
0.005
0.004
0.003
VGS = 10V
0.08
0.06
0.04
0.02
ID = 20A
0.002
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.015
VGS = 10V
0.012
175oC 150oC
0.009
0.006
0.003
125oC
85oC
25oC
-55oC
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
0
0 4 8 12 16 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2
1.8
1.6
1.4
1.2
1 VGS = 10V, ID = 20A
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
175
DMTH6010SK3
Document number: DS37665 Rev. 2 - 2
3 of 7
www.diodes.com
August 2015
© Diodes Incorporated



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0.015
0.012
0.009
0.006
0.003
VGS = 10V, ID = 20A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation vs. Junction
Temperature
175
DMTH6010SK3
4
3.5
3
2.5 ID = 1mA
2
1.5 ID = 250µA
1
0.5
0
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs. Junction
Temperature
175
30
VGS = 0V
25
20
10000
1000
f=1MHz
Ciss
Coss
15
TJ = 125oC
TJ = 85oC
10
TJ = 150oC
TJ = 25oC
5
TJ = 175oC
TJ = -55oC
0
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
100
Crss
10
1
0
5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
40
10 1000
RDS(ON) Limited
PW =10µs
PW =1µs
8 100
6
4
VDS = 30V, ID = 20A
2
0
0 5 10 15 20 25 30 35 40 45
Qg (nC)
Figure 11. Gate Charge
10 PW =100µs
PW =1ms
1 PW =10ms
0.1
0.01
TJ(Max)=175
TC=25
Single Pulse
DUT on Infinite Heatsink
VGS=10V
PW =100ms
PW =1s
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMTH6010SK3
Document number: DS37665 Rev. 2 - 2
4 of 7
www.diodes.com
August 2015
© Diodes Incorporated



DMTH6010SK3 datasheet pdf
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