DMTH6010LPS Datasheet PDF - Diodes

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DMTH6010LPS
Diodes

Part Number DMTH6010LPS
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 7 Pages


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Green DMTH6010LPS
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
BVDSS
60V
RDS(ON)
8mΩ @ VGS = 10V
12mΩ @ VGS = 4.5V
ID
TC = +25°C
(Note 8)
100A
85A
Description
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance.
Applications
Notebook Battery Power Management
DC-DC Converters
Load Switch
POWERDI®5060-8
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMTH6010LPSQ)
Mechanical Data
Case: POWERDI®5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Pin1
SD
SD
SD
GD
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMTH6010LPS-13
Case
POWERDI®5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
H6010LS
YY WW
=Manufacturers Marking
H6010LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
S S SG
POWERDI is a registered trademark of Diodes Incorporated.
DMTH6010LPS
Document number: DS37354 Rev. 5 - 2
1 of 7
www.diodes.com
November 2015
© Diodes Incorporated



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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
TA = +25°C
TA = +70°C
TC = +25°C
(Note 8)
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMTH6010LPS
Value
60
±20
13.5
10.4
100
75
100
140
20
20
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.6
57
136
1.1
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
1
0.2
Typ
5.4
8.3
0.8
2,090
746
38.5
0.59
19.3
41.3
6
8.8
5.7
4.3
23.4
9.7
35.4
38.2
Max
1
±100
3
8
12
1.2
1.5
Unit Test Condition
V VGS = 0V, ID = 1mA
μA VDS = 48V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 20A
VGS = 4.5V, ID = 20A
V VGS = 0V, IS = 20A
pF
VDS = 30V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 30V, ID = 20A
ns
VDD = 30V, VGS = 10V,
ID = 20A, RG = 3
ns
nC
IF = 20A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMTH6010LPS
Document number: DS37354 Rev. 5 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated



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DMTH6010LPS
30.0
25.0
20.0
VGS=3.5V
VGS=4.0V
VGS=4.5V
VGS=3.0V
15.0
10.0
VGS=10V
5.0
0.0
0
VGS=2.5V
VGS=2.2V
1234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
0.01
0.009
0.008
VGS=4.5V
0.007
0.006
VGS=10V
0.005
0.004
0 2 4 6 8 10 12 14 16 18
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
20
2
1.6
1.2
VGS=10V, ID=10A
0.8
VGS=5V, ID=5A
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 5. On-Resistance Variation with Temperature
30
VDS= 5V
25
20
15
10
5
0
0
125
150
175
85
25
-55
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.02
0.018
0.016
VGS= 4.5V
150125
175
0.014
0.012
0.01
0.008
0.006
85
25
-55
0.004
0.002
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 4. Typical On-Resistance vs. Drain Current and
Temperature
0.02
0.018
0.016
0.014
0.012
0.01
VGS=5V, ID=5A
0.008
0.006
0.004
VGS=10V, ID=10A
0.002
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMTH6010LPS
Document number: DS37354 Rev. 5 - 2
3 of 7
www.diodes.com
November 2015
© Diodes Incorporated



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2
1.8
1.6
ID=1mA
1.4
1.2
1
0.8 ID=250μA
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 7. Gate Threshold Variation vs. junction
Temperature
10000
f=1MHz
1000
Ciss
Coss
100
Crss
10
1
0
10 20 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Typical Junction Capacitance
40
DMTH6010LPS
30
25
VGS=0V, TJ=125
20
VGS=0V, TJ=150
15
VGS=0V, TJ=175
10
VGS=0V, TJ=85
VGS=0V, TJ=25
5
VGS=0V, TJ=-55
0
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage vs. Current
1.5
10
9
8
7
6
5
4
3
2
1
0
0
VDS=30V, ID=20A
5 10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
Figure 10. Gate Charge
1000
100
R DS(on)
Limited
PW = 10µs
PW = 1µs
10 PW = 1s
PW = 100ms
PW = 10ms
1 PW = 1ms
T J(m ax)= 175°C
PW = 100µs
0.1 T C = 25°C
0.01
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
100
DMTH6010LPS
Document number: DS37354 Rev. 5 - 2
4 of 7
www.diodes.com
November 2015
© Diodes Incorporated



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