DMTH4007SPS Datasheet PDF - Diodes

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DMTH4007SPS
Diodes

Part Number DMTH4007SPS
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Page 8 Pages


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Green DMTH4007SPS
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
BVDSS
40V
RDS(ON) Max
7.6mΩ @ VGS = 10V
ID Max
TC = +25°C
(Note 9)
100A
Description
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and loadswitch.
Applications
Power Management
DC-DC Converters
Motor Control
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMTH4007SPSQ)
Mechanical Data
Case: POWERDI®5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
POWERDI®5060-8
Top View
Pin1
Bottom View
Internal Schematic
SD
SD
SD
GD
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMTH4007SPS-13
Case
POWERDI®5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPS
Document number: DS37358 Rev. 4 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated



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Marking Information
DMTH4007SPS
DDDD
H4007SS
YY WW
SS SG
= Manufacturer’s Marking
H4007SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.3mH
Avalanche Energy, L=0.3mH
TA = +25°C
TA = +70°C
TC = +25°C
(Note 9)
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
40
±20
15.7
13.1
100
77
100
120
20
60
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.8
53
136
1.1
-55 to +175
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
Units
W
°C/W
W
°C/W
°C
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPS
Document number: DS37358 Rev. 4 - 2
2 of 8
www.diodes.com
November 2015
© Diodes Incorporated



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DMTH4007SPS
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
Min
40
2
Typ
4.9
2,082
790
113
0.46
41.9
10
11.5
7
11.5
15.6
8.8
29.9
23
Max
1
±100
4
7.6
1.2
Unit
Test Condition
V VGS = 0V, ID = 1mA
μA VDS = 32V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 20A
V VGS = 0V, IS = 20A
pF
VDS = 25V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 30V, ID = 20A, VGS = 10V
ns
VDD = 30V, VGS = 10V,
ID = 20A, RG = 3Ω
ns
nC
IF = 20A, di/dt = 100A/μs
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPS
Document number: DS37358 Rev. 4 - 2
3 of 8
www.diodes.com
November 2015
© Diodes Incorporated



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DMTH4007SPS
50.0 30
40.0
VGS=5.0V
VDS= 5.0V
25
30.0
20.0
VGS=6.0V
VGS=10.0V
VGS=4.5V
10.0
VGS=4.0V
0.0
0
10.00
VGS=3.5V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
9.00
8.00
7.00
6.00
5.00
4.00
3.00
VGS=6.0V
VGS=10V
2.00
1.00
0.00
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.012
VGS=10V
0.01
150125
175
20
15
10
5
0
0
50
45
40
35
30
25
20
15
10
5
0
2
125
150
175
85
25
-55
12345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
6
ID=20A
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
2.2
2
1.8
0.008
0.006
0.004
85
25
-55
1.6
1.4 VGS=10V, ID=20A
1.2
1
0.002
0.8
0.6
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPS
Document number: DS37358 Rev. 4 - 2
4 of 8
www.diodes.com
November 2015
© Diodes Incorporated



DMTH4007SPS datasheet pdf
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DMTH4007SPS pdf
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