DMTH4007SPDQ Datasheet PDF - Diodes

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DMTH4007SPDQ
Diodes

Part Number DMTH4007SPDQ
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Page 8 Pages


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DMTH4007SPDQ
40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary
BVDSS
40V
RDS(ON) Max
8.6m@ VGS = 10V
ID Max
TC = +25°C
(Note 10)
45A
Features and Benefits
Rated to +175°C Ideal for High Ambient Temperature
Environments
High Conversion Efficiency
Low RDS(ON) Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI®5060-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
Top View
Pin1
Bottom View
S1
G1
S2
G2
Pin out
Top View
D1
D1
D2
G1
D2
D1 D2
G2
S1 S2
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMTH4007SPDQ-13
PowerDI5060-8
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
PowerDI is a registered trademark of Diodes Incorporated.
DMTH4007SPDQ
Document number: DS38393 Rev. 1 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated



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Marking Information
D1 D1 D2 D2
H4007SD
YY WW
S1 G1 S2 G2
DMTH4007SPDQ
= Manufacturer’s Marking
H4007SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
WW = Week (01 - 53)
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7)
Continuous Drain Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TC = +25°C
(Note 10)
TC = +100°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Value
40
±20
45
38.1
14.2
11.9
90
34
20
20
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.6
57
37.5
4
-55 to +175
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
Units
V
V
A
A
A
A
A
mJ
Unit
W
°C/W
W
°C/W
°C
DMTH4007SPDQ
Document number: DS38393 Rev. 1 - 2
2 of 8
www.diodes.com
November 2015
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DMTH4007SPDQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
IGSS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
VSD
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
Total Gate Charge
QG
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Body Diode Reverse Recovery Time
tRR
Body Diode Reverse Recovery Charge
QRR
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
10. Package limited.
Min
40
2
Typ
7.5
0.85
2,026
702
84.8
0.46
41.9
10
11.5
7
11.5
15.6
8.8
29.9
23
Max
1
±100
4
8.6
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 32V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 17A
V VGS = 0V, IS = 17A
pF
pF VDS = 30V, VGS = 0V,
f = 1MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC VDS = 30V, ID = 20A, VGS = 10V
nC
ns
ns VDD = 30V, VGS = 10V,
ns ID = 20A, RG = 3
ns
ns
nC
IF = 20A, di/dt = 100A/μs
DMTH4007SPDQ
Document number: DS38393 Rev. 1 - 2
3 of 8
www.diodes.com
November 2015
© Diodes Incorporated



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DMTH4007SPDQ
50
VGS = 10V
VGS = 5.0V
40
30
VDS = 5.0V
25
VGS = 6.0V
30
20
VGS = 4.5V
10
VGS = 4.0V
VGS = 3.5V
0
0 0.5 1 1.5 2 2.5 3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
20
15
10
5
0
0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
12345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
6
10
9
8
VGS = 10V
7
6
5
4
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
50
45
40 ID = 17A
35
30
25
20
15
10
5
0
2 4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
20
0.015
0.013
0.011
TA = 175C
TA = 150C
TA = 125C
TA = 85C
2.2
2
1.8
1.6
VGS = 10V
ID = 20A
0.009
0.007
TA = 25C
TA = -55C
1.4
1.2
1
0.005
0.8
0.003
0
VGS = 10V
5 10 15 20 25
I D, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMTH4007SPDQ
Document number: DS38393 Rev. 1 - 2
4 of 8
www.diodes.com
November 2015
© Diodes Incorporated



DMTH4007SPDQ datasheet pdf
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DMTH4007SPDQ pdf
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